Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques

J. H. Shim, N. H. Cho, Seongil Im

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.

Original languageEnglish
Pages (from-to)1017-1020
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26
EventDesigning, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of
Duration: 2003 Nov 52003 Nov 8

Fingerprint

Plasma enhanced chemical vapor deposition
flow velocity
Flow rate
vapor deposition
Crystallite size
Thin films
thin films
Nanocrystalline silicon
Crystallization
Crystal growth
crystal growth
Hydrogen bonds
Gases
Kinetics
kinetics
silicon
hydrogen
gases
Experiments

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Shim, J. H. ; Cho, N. H. ; Im, Seongil. / Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques. In: Materials Science Forum. 2004 ; Vol. 449-452, No. II. pp. 1017-1020.
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abstract = "Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.",
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Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques. / Shim, J. H.; Cho, N. H.; Im, Seongil.

In: Materials Science Forum, Vol. 449-452, No. II, 26.07.2004, p. 1017-1020.

Research output: Contribution to journalConference article

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