Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques

J. H. Shim, N. H. Cho, Seongil Im

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Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.

Original languageEnglish
Pages (from-to)1017-1020
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26
EventDesigning, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of
Duration: 2003 Nov 52003 Nov 8

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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