Nanostructural features of nc-Si:H thin films prepared by PECVD

J. H. Shim, Seongil Im, N. H. Cho

Research output: Contribution to journalConference article

38 Citations (Scopus)

Abstract

Nanocrystalline hydrogenated silicon (nc-Si:H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiH 4 and H 2 was introduced into the evacuated reaction chamber. When the H 2 flow rate was low, the density of Si-H 3 bonds was high in the films. In particular, when the H 2 flow rate was 50sccm, ~2nm-sized nanocrystallites were present in the films; a large number of Si clusters consisting of Si-H 3 and Si-H 2 bonds were present in the amorphous matrix of the films. When the H 2 flow rate was high, e.g. 100sccm, a large number of Si-H bonds contributed to the passivation of the surface of the large volume of nanocrystallites; a small number of Si clusters consisting of Si-H 2 bonds were present in the amorphous matrix. The relative fraction of the SiH 3 and Si-H 2 bonds in the amorphous matrix varied sensitively with either the H 2 flow rate or post-deposition annealing temperature. The variation was associated with the change in the intensity as well as the wavelength of the main PL peaks, indicating the change in the total volume as well as the size of the nanocrystallites in the films.

Original languageEnglish
Pages (from-to)268-273
Number of pages6
JournalApplied Surface Science
Volume234
Issue number1-4
DOIs
Publication statusPublished - 2004 Jul 15
EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: 2003 Sep 152003 Sep 19

Fingerprint

Silicon
Plasma enhanced chemical vapor deposition
Nanocrystallites
Flow rate
Thin films
Passivation
Annealing
Wavelength
Temperature

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Shim, J. H. ; Im, Seongil ; Cho, N. H. / Nanostructural features of nc-Si:H thin films prepared by PECVD. In: Applied Surface Science. 2004 ; Vol. 234, No. 1-4. pp. 268-273.
@article{6d16f90041fe4654b5bd62daed80685a,
title = "Nanostructural features of nc-Si:H thin films prepared by PECVD",
abstract = "Nanocrystalline hydrogenated silicon (nc-Si:H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiH 4 and H 2 was introduced into the evacuated reaction chamber. When the H 2 flow rate was low, the density of Si-H 3 bonds was high in the films. In particular, when the H 2 flow rate was 50sccm, ~2nm-sized nanocrystallites were present in the films; a large number of Si clusters consisting of Si-H 3 and Si-H 2 bonds were present in the amorphous matrix of the films. When the H 2 flow rate was high, e.g. 100sccm, a large number of Si-H bonds contributed to the passivation of the surface of the large volume of nanocrystallites; a small number of Si clusters consisting of Si-H 2 bonds were present in the amorphous matrix. The relative fraction of the SiH 3 and Si-H 2 bonds in the amorphous matrix varied sensitively with either the H 2 flow rate or post-deposition annealing temperature. The variation was associated with the change in the intensity as well as the wavelength of the main PL peaks, indicating the change in the total volume as well as the size of the nanocrystallites in the films.",
author = "Shim, {J. H.} and Seongil Im and Cho, {N. H.}",
year = "2004",
month = "7",
day = "15",
doi = "10.1016/j.apsusc.2004.05.073",
language = "English",
volume = "234",
pages = "268--273",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

Nanostructural features of nc-Si:H thin films prepared by PECVD. / Shim, J. H.; Im, Seongil; Cho, N. H.

In: Applied Surface Science, Vol. 234, No. 1-4, 15.07.2004, p. 268-273.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Nanostructural features of nc-Si:H thin films prepared by PECVD

AU - Shim, J. H.

AU - Im, Seongil

AU - Cho, N. H.

PY - 2004/7/15

Y1 - 2004/7/15

N2 - Nanocrystalline hydrogenated silicon (nc-Si:H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiH 4 and H 2 was introduced into the evacuated reaction chamber. When the H 2 flow rate was low, the density of Si-H 3 bonds was high in the films. In particular, when the H 2 flow rate was 50sccm, ~2nm-sized nanocrystallites were present in the films; a large number of Si clusters consisting of Si-H 3 and Si-H 2 bonds were present in the amorphous matrix of the films. When the H 2 flow rate was high, e.g. 100sccm, a large number of Si-H bonds contributed to the passivation of the surface of the large volume of nanocrystallites; a small number of Si clusters consisting of Si-H 2 bonds were present in the amorphous matrix. The relative fraction of the SiH 3 and Si-H 2 bonds in the amorphous matrix varied sensitively with either the H 2 flow rate or post-deposition annealing temperature. The variation was associated with the change in the intensity as well as the wavelength of the main PL peaks, indicating the change in the total volume as well as the size of the nanocrystallites in the films.

AB - Nanocrystalline hydrogenated silicon (nc-Si:H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiH 4 and H 2 was introduced into the evacuated reaction chamber. When the H 2 flow rate was low, the density of Si-H 3 bonds was high in the films. In particular, when the H 2 flow rate was 50sccm, ~2nm-sized nanocrystallites were present in the films; a large number of Si clusters consisting of Si-H 3 and Si-H 2 bonds were present in the amorphous matrix of the films. When the H 2 flow rate was high, e.g. 100sccm, a large number of Si-H bonds contributed to the passivation of the surface of the large volume of nanocrystallites; a small number of Si clusters consisting of Si-H 2 bonds were present in the amorphous matrix. The relative fraction of the SiH 3 and Si-H 2 bonds in the amorphous matrix varied sensitively with either the H 2 flow rate or post-deposition annealing temperature. The variation was associated with the change in the intensity as well as the wavelength of the main PL peaks, indicating the change in the total volume as well as the size of the nanocrystallites in the films.

UR - http://www.scopus.com/inward/record.url?scp=3342955631&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3342955631&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.05.073

DO - 10.1016/j.apsusc.2004.05.073

M3 - Conference article

VL - 234

SP - 268

EP - 273

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -