Nanowire arrays for thermoelectric devices

Woochul Kim, Alexis R. Abramson, Scott T. Huxtable, Arun Majumdar, Yiying Wu, Lynn Trahey, Peidong Yang, Angelica Stacy, Timothy D. Sands, Ronald Gronsky

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi 2 Te 3 ) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi 2 Te 3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi 2 Te 3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi 2 Te 2 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

Original languageEnglish
Title of host publicationProceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1
Pages101-104
Number of pages4
Publication statusPublished - 2003 Dec 1
Event2003 ASME Summer Heat Transfer Conference (HT2003) - Las Vegas, NV, United States
Duration: 2003 Jul 212003 Jul 23

Publication series

NameProceedings of the ASME Summer Heat Transfer Conference
Volume2003

Other

Other2003 ASME Summer Heat Transfer Conference (HT2003)
CountryUnited States
CityLas Vegas, NV
Period03/7/2103/7/23

Fingerprint

Nanowires
Silicon
Peltier effect
Semiconductor junctions
Fabrication
Ohmic contacts
Thermocouples
Bismuth
Contamination
Doping (additives)
Oxides
Electric potential
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, W., Abramson, A. R., Huxtable, S. T., Majumdar, A., Wu, Y., Trahey, L., ... Gronsky, R. (2003). Nanowire arrays for thermoelectric devices. In Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1 (pp. 101-104). (Proceedings of the ASME Summer Heat Transfer Conference; Vol. 2003).
Kim, Woochul ; Abramson, Alexis R. ; Huxtable, Scott T. ; Majumdar, Arun ; Wu, Yiying ; Trahey, Lynn ; Yang, Peidong ; Stacy, Angelica ; Sands, Timothy D. ; Gronsky, Ronald. / Nanowire arrays for thermoelectric devices. Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1. 2003. pp. 101-104 (Proceedings of the ASME Summer Heat Transfer Conference).
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Kim, W, Abramson, AR, Huxtable, ST, Majumdar, A, Wu, Y, Trahey, L, Yang, P, Stacy, A, Sands, TD & Gronsky, R 2003, Nanowire arrays for thermoelectric devices. in Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1. Proceedings of the ASME Summer Heat Transfer Conference, vol. 2003, pp. 101-104, 2003 ASME Summer Heat Transfer Conference (HT2003), Las Vegas, NV, United States, 03/7/21.

Nanowire arrays for thermoelectric devices. / Kim, Woochul; Abramson, Alexis R.; Huxtable, Scott T.; Majumdar, Arun; Wu, Yiying; Trahey, Lynn; Yang, Peidong; Stacy, Angelica; Sands, Timothy D.; Gronsky, Ronald.

Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1. 2003. p. 101-104 (Proceedings of the ASME Summer Heat Transfer Conference; Vol. 2003).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kim W, Abramson AR, Huxtable ST, Majumdar A, Wu Y, Trahey L et al. Nanowire arrays for thermoelectric devices. In Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1. 2003. p. 101-104. (Proceedings of the ASME Summer Heat Transfer Conference).