Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

S. I. Jung, H. Y. Yeo, I. Yun, I. K. Han, S. M. Cho, J. I. Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

Original languageEnglish
Pages (from-to)763-766
Number of pages4
JournalJournal of the Korean Physical Society
Volume50
Issue number3
DOIs
Publication statusPublished - 2007 Mar

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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