Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

S. I. Jung, H. Y. Yeo, I. Yun, I. K. Han, S. M. Cho, J. I. Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

Original languageEnglish
Pages (from-to)763-766
Number of pages4
JournalJournal of the Korean Physical Society
Volume50
Issue number3
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

field emission
near fields
semiconductor lasers
quantum dots
microscopy
scanning
electroluminescence
spatial resolution
injection
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{dfe6e49c0b4f4a1cb58b2d23a8511512,
title = "Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy",
abstract = "Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.",
author = "Jung, {S. I.} and Yeo, {H. Y.} and I. Yun and Han, {I. K.} and Cho, {S. M.} and Lee, {J. I.}",
year = "2007",
month = "1",
day = "1",
doi = "10.3938/jkps.50.763",
language = "English",
volume = "50",
pages = "763--766",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "3",

}

Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy. / Jung, S. I.; Yeo, H. Y.; Yun, I.; Han, I. K.; Cho, S. M.; Lee, J. I.

In: Journal of the Korean Physical Society, Vol. 50, No. 3, 01.01.2007, p. 763-766.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, I.

AU - Han, I. K.

AU - Cho, S. M.

AU - Lee, J. I.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

AB - Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

UR - http://www.scopus.com/inward/record.url?scp=34147169381&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34147169381&partnerID=8YFLogxK

U2 - 10.3938/jkps.50.763

DO - 10.3938/jkps.50.763

M3 - Article

VL - 50

SP - 763

EP - 766

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -