Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation

S. I. Jung, H. Y. Yeo, I. Yun, I. K. Han, J. I. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Near-field scanning optical microscopy (NSOM) studies of broad area laser diodes (BALD) with different structures of quantum dot (QD) and quantum well (QW) were performed. The values of α-factor for the two types of BALD were measured as 0.6 (QD) and 2 (QW), respectively. Near-field measurements show that the filamentation in the BALD is closely related to the α-factor. Moreover, the high resolution (<100 nm) of NSOM provides a detailed mapping of the BALDs output from the active region.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages410-411
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Linewidth
Semiconductor quantum dots
Near field scanning optical microscopy
Semiconductor lasers
Microscopes
Scanning
Semiconductor quantum wells

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Jung, S. I., Yeo, H. Y., Yun, I., Han, I. K., & Lee, J. I. (2006). Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 410-411). [4388791] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388791
Jung, S. I. ; Yeo, H. Y. ; Yun, I. ; Han, I. K. ; Lee, J. I. / Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope : Effects of the linewidth enhancement factor on filamentation. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. pp. 410-411 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC).
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abstract = "Near-field scanning optical microscopy (NSOM) studies of broad area laser diodes (BALD) with different structures of quantum dot (QD) and quantum well (QW) were performed. The values of α-factor for the two types of BALD were measured as 0.6 (QD) and 2 (QW), respectively. Near-field measurements show that the filamentation in the BALD is closely related to the α-factor. Moreover, the high resolution (<100 nm) of NSOM provides a detailed mapping of the BALDs output from the active region.",
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Jung, SI, Yeo, HY, Yun, I, Han, IK & Lee, JI 2006, Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388791, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 410-411, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388791

Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope : Effects of the linewidth enhancement factor on filamentation. / Jung, S. I.; Yeo, H. Y.; Yun, I.; Han, I. K.; Lee, J. I.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 410-411 4388791 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Jung SI, Yeo HY, Yun I, Han IK, Lee JI. Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 410-411. 4388791. (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC). https://doi.org/10.1109/NMDC.2006.4388791