Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation

S. I. Jung, H. Y. Yeo, I. Yun, I. K. Han, J. I. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Near-field scanning optical microscopy (NSOM) studies of broad area laser diodes (BALD) with different structures of quantum dot (QD) and quantum well (QW) were performed. The values of α-factor for the two types of BALD were measured as 0.6 (QD) and 2 (QW), respectively. Near-field measurements show that the filamentation in the BALD is closely related to the α-factor. Moreover, the high resolution (<100 nm) of NSOM provides a detailed mapping of the BALDs output from the active region.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages410-411
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Science(all)

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    Jung, S. I., Yeo, H. Y., Yun, I., Han, I. K., & Lee, J. I. (2006). Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 410-411). [4388791] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388791