Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation

S. I. Jung; H. Y. Yeo; I. Yun; I. K. Han; J. I. Lee

doi:10.1109/NMDC.2006.4388791

Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation

S. I. Jung, H. Y. Yeo, I. Yun, I. K. Han, J. I. Lee

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Near-field scanning optical microscopy (NSOM) studies of broad area laser diodes (BALD) with different structures of quantum dot (QD) and quantum well (QW) were performed. The values of α-factor for the two types of BALD were measured as 0.6 (QD) and 2 (QW), respectively. Near-field measurements show that the filamentation in the BALD is closely related to the α-factor. Moreover, the high resolution (<100 nm) of NSOM provides a detailed mapping of the BALDs output from the active region.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	410-411
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388791
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388791

Cite this

Jung, S. I., Yeo, H. Y., Yun, I., Han, I. K., & Lee, J. I. (2006). Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 410-411). [4388791] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388791

Jung, S. I. ; Yeo, H. Y. ; Yun, I. et al. / Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope : Effects of the linewidth enhancement factor on filamentation. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. pp. 410-411 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC).

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title = "Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation",

abstract = "Near-field scanning optical microscopy (NSOM) studies of broad area laser diodes (BALD) with different structures of quantum dot (QD) and quantum well (QW) were performed. The values of α-factor for the two types of BALD were measured as 0.6 (QD) and 2 (QW), respectively. Near-field measurements show that the filamentation in the BALD is closely related to the α-factor. Moreover, the high resolution (<100 nm) of NSOM provides a detailed mapping of the BALDs output from the active region.",

author = "Jung, {S. I.} and Yeo, {H. Y.} and I. Yun and Han, {I. K.} and Lee, {J. I.}",

year = "2006",

doi = "10.1109/NMDC.2006.4388791",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "410--411",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Jung, SI, Yeo, HY, Yun, I, Han, IK & Lee, JI 2006, Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388791, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 410-411, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388791

Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope : Effects of the linewidth enhancement factor on filamentation. / Jung, S. I.; Yeo, H. Y.; Yun, I. et al.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 410-411 4388791 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - Near-field scanning optical microscopy (NSOM) studies of broad area laser diodes (BALD) with different structures of quantum dot (QD) and quantum well (QW) were performed. The values of α-factor for the two types of BALD were measured as 0.6 (QD) and 2 (QW), respectively. Near-field measurements show that the filamentation in the BALD is closely related to the α-factor. Moreover, the high resolution (<100 nm) of NSOM provides a detailed mapping of the BALDs output from the active region.

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Jung SI, Yeo HY, Yun I, Han IK, Lee JI. Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 410-411. 4388791. (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC). doi: 10.1109/NMDC.2006.4388791

Near-field measurement of quantum dot broad area laser diodes by utilizing near-field scanning optical microscope: Effects of the linewidth enhancement factor on filamentation

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