Near-field scanning optical microscopy, in which an uncoated fiber tip is used for delivering excitation light and picking up photoluminescence, is applied for diagnosing defects in semiconductor devices. Using this high resolution, potentially subdiffraction limited, and fast acquisition time scanning μ-photoluminescence (PL) technique, we are able to locate nonluminescing defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of the measured spectral PL intensity are also discussed.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1998|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)