Near-infrared photodetectors utilizing MoS2-based heterojunctions

Min Ji Park, Jung Ki Min, Sum Gyun Yi, Joo Hyoung Kim, Jeseung Oh, Kyung Hwa Yoo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W-1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor.

Original languageEnglish
Article number044504
JournalJournal of Applied Physics
Volume118
Issue number4
DOIs
Publication statusPublished - 2015 Jul 28

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photometers
heterojunctions
photocurrents
graphene
phototransistors
diodes
irradiation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Park, Min Ji ; Min, Jung Ki ; Yi, Sum Gyun ; Kim, Joo Hyoung ; Oh, Jeseung ; Yoo, Kyung Hwa. / Near-infrared photodetectors utilizing MoS2-based heterojunctions. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 4.
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Near-infrared photodetectors utilizing MoS2-based heterojunctions. / Park, Min Ji; Min, Jung Ki; Yi, Sum Gyun; Kim, Joo Hyoung; Oh, Jeseung; Yoo, Kyung Hwa.

In: Journal of Applied Physics, Vol. 118, No. 4, 044504, 28.07.2015.

Research output: Contribution to journalArticle

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