Near-infrared photodetectors utilizing MoS2-based heterojunctions

Min Ji Park, Jung Ki Min, Sum Gyun Yi, Joo Hyoung Kim, Jeseung Oh, Kyung Hwa Yoo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W-1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor.

Original languageEnglish
Article number044504
JournalJournal of Applied Physics
Volume118
Issue number4
DOIs
Publication statusPublished - 2015 Jul 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Near-infrared photodetectors utilizing MoS<sub>2</sub>-based heterojunctions'. Together they form a unique fingerprint.

  • Cite this