Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

S. Y. Kwon, M. H. Cho, P. Moon, H. J. Kim, H. Na, H. C. Seo, H. J. Kim, Y. Shin, D. W. Moon, Y. Sun, Y. H. Cho, E. Yoon

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Abstract

We grew high quality In-rich InGaN/GaN single quantum well (SQW) structures by metal-organic chemical vapor deposition using growth interruption and obtained a sharp photoluminescence peak in near-ultraviolet (UV) region. During In-rich InGaN well layer growth, only TMIn and ammonia were supplied, however, atomic interdiffusion as well as defect generation occurred to relieve large lattice mismatch over 10% between InN and GaN. From medium-energy ion scattering measurement and subsequent fitting of the spectrum, we could find that the InGaN well layer was In-rich and it has 60-70% indium content. We also found the compositional grading of indium at top and bottom InGaN/GaN interfaces. The Fourier series method was used to calculate the energy levels and envelope functions in In-rich InGaN/GaN SQW with compositional grading and we could quantitatively explain the near-UV emission observed from the SQW.

Original languageEnglish
Pages (from-to)2818-2822
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
Publication statusPublished - 2004 Sep

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Kwon, S. Y., Cho, M. H., Moon, P., Kim, H. J., Na, H., Seo, H. C., Kim, H. J., Shin, Y., Moon, D. W., Sun, Y., Cho, Y. H., & Yoon, E. (2004). Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading. Physica Status Solidi (A) Applied Research, 201(12), 2818-2822. https://doi.org/10.1002/pssa.200405076