Nearly massless electrons in the silicon interface with a metal film

Keun Su Kim, Sung Chul Jung, Myung Ho Kang, Han Woong Yeom

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the interface with the film to have a nearly linear dispersion with an effective mass about 20 times lighter than bulk Si and comparable to graphene. The reduction of mass can be accounted for by a repulsive interaction between neighboring bands of the metal film and Si substrate. Our result suggests a promising way to take advantage of massless carriers in silicon-based thin-film devices, which can also be applied to various other semiconductor devices.

Original languageEnglish
Article number246803
JournalPhysical Review Letters
Volume104
Issue number24
DOIs
Publication statusPublished - 2010 Jun 16

Fingerprint

metal films
silicon
electrons
semiconductor devices
graphene
photoelectric emission
inversions
thin films
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, Keun Su ; Jung, Sung Chul ; Kang, Myung Ho ; Yeom, Han Woong. / Nearly massless electrons in the silicon interface with a metal film. In: Physical Review Letters. 2010 ; Vol. 104, No. 24.
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Nearly massless electrons in the silicon interface with a metal film. / Kim, Keun Su; Jung, Sung Chul; Kang, Myung Ho; Yeom, Han Woong.

In: Physical Review Letters, Vol. 104, No. 24, 246803, 16.06.2010.

Research output: Contribution to journalArticle

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