Negative Differential Resistance Characteristics in Forming-Free NbOx with Crystalline NbO2 Phase

Jimin Lee, Jaeyeon Kim, Taeho Kim, Hyunchul Sohn

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Negative differential resistance (NDR) in NbOx films attracts attention for potential application in neuromorphic computing. A continuous S-type and abrupt snapback NDR characteristics are reported for NbOx devices. The NDR characteristics are expected to depend on the nature of the switching path in NbOx. Previous NDR studies have been performed mainly on amorphous NbOx films with an electroforming process to create a switching path. Herein, the NDR characteristics of a forming-free NbOx device with crystalline NbO2 phases are investigated and these are compared with those of an amorphous NbOx device with forming. The forming-free NbOx device exhibits a secondary abrupt snapback NDR in addition to the initial S-type NDR, possibly due to a metal–insulator transition in the NbO2 phases. Meanwhile, the amorphous NbOx devices only show a continuous S-type behavior.

Original languageEnglish
Article number2000610
JournalPhysica Status Solidi - Rapid Research Letters
Volume15
Issue number4
DOIs
Publication statusPublished - 2021 Apr

Bibliographical note

Funding Information:
This research was supported by the industry–university cooperation project of Samsung Electronics and MOTIE (Ministry of Trade, Industry & Energy) (project number 100680075) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.

Publisher Copyright:
© 2021 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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