Negative Trion Auger Recombination in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

Taehee Kim, Yu Ho Won, Eunjoo Jang, Dongho Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Upon demonstrating self-luminescing quantum dot based light-emitting devices (QD-LEDs), rapid Auger recombination acts as one of the performance limiting factors. Here, we report the Auger processes of highly luminescent InP/ZnSe/ZnS QDs with different midshell structures that affect the performances of QD-LEDs. Transient PL measurements reveal that exciton-exciton binding energy is dependent on the midshell thickness, which implies that the intercarrier Coulomb interaction caused by the introduction of excess charges may come under the influence of midshell thickness which is in contrast with the nearly stationary single exciton behavior. Photochemical electron-doping and optical measurements of a single QD show that negative trion Auger recombination exhibits strong correlation with midshell thickness, which is supported by the dynamics of a hot electron generated in the midshell. These results highlight the role of excess electrons and the effects of engineered shell structures in InP/ZnSe/ZnS QDs, which eventually determine the Auger recombination and QD-LED performances.

Original languageEnglish
Pages (from-to)2111-2116
Number of pages6
JournalNano letters
Volume21
Issue number5
DOIs
Publication statusPublished - 2021 Mar 10

Bibliographical note

Funding Information:
The work at Yonsei University was financially supported by the Samsung Advanced Institute of Technology (SAIT) under Project Number IO170214-04232-01.

Publisher Copyright:
© 2021 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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