Neural Cells on Iridium Oxide

I. S. Lee, Jongchul Park, G. H. Lee, W. S. Seo, Y. H. Lee, K. Y. Lee, J. K. Kim, F. Z. Cui

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Iridium oxide was investigated as a material for the stimulating neural electrode. Iridium oxide was formed by potential sweep of iridium film that was deposited on either Si wafer or silicone rubber with electron-beam evaporation. The rate of iridium oxide formation was dependent on the upper and lower limits of potential sweep. The higher thickness of iridium oxide produced the higher charge injection due to the reversible valence transition of iridium within oxide. Embryonic cortical neural cells formed neurofilament after 4-day culture on iridium oxide, which indicated neural cells could adhere and survive on iridium oxide.

Original languageEnglish
Pages (from-to)805-808
Number of pages4
JournalKey Engineering Materials
Volume254-256
Publication statusPublished - 2004 Jan 9
EventThe Annual Meeting of the International Society for Ceramics in Medicine - Porto, Portugal
Duration: 2003 Nov 62003 Nov 9

Fingerprint

Iridium
Oxides
Silicone Elastomers
Charge injection
iridium oxide
Electron beams
Evaporation
Silicones
Rubber
Electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, I. S., Park, J., Lee, G. H., Seo, W. S., Lee, Y. H., Lee, K. Y., ... Cui, F. Z. (2004). Neural Cells on Iridium Oxide. Key Engineering Materials, 254-256, 805-808.
Lee, I. S. ; Park, Jongchul ; Lee, G. H. ; Seo, W. S. ; Lee, Y. H. ; Lee, K. Y. ; Kim, J. K. ; Cui, F. Z. / Neural Cells on Iridium Oxide. In: Key Engineering Materials. 2004 ; Vol. 254-256. pp. 805-808.
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Lee, IS, Park, J, Lee, GH, Seo, WS, Lee, YH, Lee, KY, Kim, JK & Cui, FZ 2004, 'Neural Cells on Iridium Oxide', Key Engineering Materials, vol. 254-256, pp. 805-808.

Neural Cells on Iridium Oxide. / Lee, I. S.; Park, Jongchul; Lee, G. H.; Seo, W. S.; Lee, Y. H.; Lee, K. Y.; Kim, J. K.; Cui, F. Z.

In: Key Engineering Materials, Vol. 254-256, 09.01.2004, p. 805-808.

Research output: Contribution to journalConference article

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T1 - Neural Cells on Iridium Oxide

AU - Lee, I. S.

AU - Park, Jongchul

AU - Lee, G. H.

AU - Seo, W. S.

AU - Lee, Y. H.

AU - Lee, K. Y.

AU - Kim, J. K.

AU - Cui, F. Z.

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Y1 - 2004/1/9

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AB - Iridium oxide was investigated as a material for the stimulating neural electrode. Iridium oxide was formed by potential sweep of iridium film that was deposited on either Si wafer or silicone rubber with electron-beam evaporation. The rate of iridium oxide formation was dependent on the upper and lower limits of potential sweep. The higher thickness of iridium oxide produced the higher charge injection due to the reversible valence transition of iridium within oxide. Embryonic cortical neural cells formed neurofilament after 4-day culture on iridium oxide, which indicated neural cells could adhere and survive on iridium oxide.

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Lee IS, Park J, Lee GH, Seo WS, Lee YH, Lee KY et al. Neural Cells on Iridium Oxide. Key Engineering Materials. 2004 Jan 9;254-256:805-808.