Neutral donor scattering of exciton polaritons in ZnSe/GaAs epilayers

E. D. Sim, J. H. Song, K. S. Baek, S. K. Chang, K. S. Lee

Research output: Contribution to journalArticle

Abstract

The photoluminescence properties of ZnSe epilayers grown on GaAs substrates were studied in the temperature range of 10 - 100 K. The photoluminescence lineshape near the free exciton energy was significantly different depending on the epilayer thickness; for thin layers with thicknesses of about 0.1 μm, the spectrum consisted of a single free-exciton line whereas for thick layers with thicknesses of about 1 μm, the spectrum exhibited a broader line with a dip. The dip became wider with increasing layer thickness, temperature, and excitation intensity. These behaviors are explained in the framework of elastic exciton-polariton scattering from residual neutral impurities.

Original languageEnglish
Pages (from-to)631-634
Number of pages4
JournalJournal of the Korean Physical Society
Volume52
Issue number3
DOIs
Publication statusPublished - 2008 Mar

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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