New approach to the growth of SiOx nanowire bunch using Au catalyst and SiNx film on Si substrate

Nae Man Park; Hyun Kyu Park; Chel Jong Choi; Sang Woo Kim; Sunglyul Maeng

doi:10.1016/j.physe.2008.05.008

New approach to the growth of SiO_x nanowire bunch using Au catalyst and SiN_x film on Si substrate

Nae Man Park, Hyun Kyu Park, Chel Jong Choi, Sang Woo Kim, Sunglyul Maeng

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

SiO_x nanowire bunches were fabricated on a SiN_x film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiN_x film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiO_x nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiO_x NWs and easily grow the NW bunch.

Original language	English
Pages (from-to)	3170-3172
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	10
DOIs	https://doi.org/10.1016/j.physe.2008.05.008
Publication status	Published - 2008 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2008.05.008

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@article{67bf35f28a404e6ba97d7dd33960c76a,

title = "New approach to the growth of SiOx nanowire bunch using Au catalyst and SiNx film on Si substrate",

abstract = "SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch.",

author = "Park, {Nae Man} and Park, {Hyun Kyu} and Choi, {Chel Jong} and Kim, {Sang Woo} and Sunglyul Maeng",

year = "2008",

month = sep,

doi = "10.1016/j.physe.2008.05.008",

language = "English",

volume = "40",

pages = "3170--3172",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "10",

}

TY - JOUR

T1 - New approach to the growth of SiOx nanowire bunch using Au catalyst and SiNx film on Si substrate

AU - Park, Nae Man

AU - Park, Hyun Kyu

AU - Choi, Chel Jong

AU - Kim, Sang Woo

AU - Maeng, Sunglyul

PY - 2008/9

Y1 - 2008/9

N2 - SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch.

AB - SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch.

UR - http://www.scopus.com/inward/record.url?scp=50249121884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249121884&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2008.05.008

DO - 10.1016/j.physe.2008.05.008

M3 - Article

AN - SCOPUS:50249121884

SN - 1386-9477

VL - 40

SP - 3170

EP - 3172

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 10

ER -

New approach to the growth of SiO_x nanowire bunch using Au catalyst and SiN_x film on Si substrate

Abstract

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