New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD

Jin Nyoung Jang, Dong Hyeok Lee, Chang Sun Park, Hyung-Ho Park, Munpyo Hong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The NBaCVD system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particles. During the deposition process, energetic H-neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (X c ) ∼85%) and dopant activation (∼1-10 20 #/cm 3 , ∼30 cm 2 /Vs) with low H ratio at near room temperature on the substrate. Also the increase of H enhance transport path (mobility incensement) which is deduced from transition of crystal orientation from [111] to [311] at constant Xc. The various analysis data of the thin films (CAFM, GIWAXS) represent the evidence of obvious flat-type nc embedded pm phase, and grain dominant charge transport characteristics.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages560-562
Number of pages3
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013 Jan 1
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 2013 Jun 162013 Jun 21

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period13/6/1613/6/21

Fingerprint

Chemical vapor deposition
Doping (additives)
Thin films
Silicon
Crystals
Crystal orientation
Charge transfer
Volume fraction
Crystallization
Chemical activation
Crystalline materials
Control systems
Atoms
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Jang, J. N., Lee, D. H., Park, C. S., Park, H-H., & Hong, M. (2013). New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 560-562). [6744213] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744213
Jang, Jin Nyoung ; Lee, Dong Hyeok ; Park, Chang Sun ; Park, Hyung-Ho ; Hong, Munpyo. / New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 560-562 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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abstract = "The NBaCVD system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particles. During the deposition process, energetic H-neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (X c ) ∼85{\%}) and dopant activation (∼1-10 20 #/cm 3 , ∼30 cm 2 /Vs) with low H ratio at near room temperature on the substrate. Also the increase of H enhance transport path (mobility incensement) which is deduced from transition of crystal orientation from [111] to [311] at constant Xc. The various analysis data of the thin films (CAFM, GIWAXS) represent the evidence of obvious flat-type nc embedded pm phase, and grain dominant charge transport characteristics.",
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Jang, JN, Lee, DH, Park, CS, Park, H-H & Hong, M 2013, New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744213, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 560-562, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 13/6/16. https://doi.org/10.1109/PVSC.2013.6744213

New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD. / Jang, Jin Nyoung; Lee, Dong Hyeok; Park, Chang Sun; Park, Hyung-Ho; Hong, Munpyo.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 560-562 6744213 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Jang JN, Lee DH, Park CS, Park H-H, Hong M. New approaches for high doping and high crystal fraction in the mixed phase nano-crystal silicon thin film with low angle laterally grown grain by near room temperature deposition process with neutral beam assisted CVD. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 560-562. 6744213. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2013.6744213