New crystallization method of amorphous silicon by selective area heating for stamp process

Do Kyung Kim, Woong Hee Jeong, Choong Hee Lee, Tae Hoon Jeong, Kyung Ho Kim, Tae Hyung Hwang, Nam Seok Roh, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

Abstract

We propose a new crystallization technique called selective area heating. In this study, we investigated a new technique for high-reliability selective area crystallization of a-Si films that does not cause thermal damage to glass substrates. We reduced the crystallization time as compared to the conventional solid phase crystallization method using a stamp-type isolated thin heater. The thin heater was fabricated with a layer of Pt on a quartz substrate via Ta adhesion and capping layers. A crystalline transverse optic phonon peak at about 519cm-1 was seen in Raman scattering spectra, showing that the films were crystallized. The poly-Si grain size was found to be smaller than 100nm, and the dendritic structure was found using scanning electron microscopy.

Original languageEnglish
Pages (from-to)329/[1463]-336/[1470]
JournalMolecular Crystals and Liquid Crystals
Volume510
DOIs
Publication statusPublished - 2009 Jan

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF, R0A-2007-000-10044-0 (2007)) and by the Korea Research Foundation (KRF, KRF-2007-357-D00136 (2007)) of the Korean Government (MOST). And this work was also supported by LCD Business Samsung Electronics.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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