We propose a new crystallization technique called selective area heating. In this study, we investigated a new technique for high-reliability selective area crystallization of a-Si films that does not cause thermal damage to glass substrates. We reduced the crystallization time as compared to the conventional solid phase crystallization method using a stamp-type isolated thin heater. The thin heater was fabricated with a layer of Pt on a quartz substrate via Ta adhesion and capping layers. A crystalline transverse optic phonon peak at about 519cm-1 was seen in Raman scattering spectra, showing that the films were crystallized. The poly-Si grain size was found to be smaller than 100nm, and the dendritic structure was found using scanning electron microscopy.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF, R0A-2007-000-10044-0 (2007)) and by the Korea Research Foundation (KRF, KRF-2007-357-D00136 (2007)) of the Korean Government (MOST). And this work was also supported by LCD Business Samsung Electronics.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics