New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology

Ja Hum Ku, Chul Sung Kim, Chul Joon Choi, Kazuyuki Fujihara, Ho Kyu Kang, Moon Yong Lee, Ju Hyuck Chung, Eung Joon Lee, Jang Eun Lee, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

New effect of titanium(Ti) capping layer on cobalt (Co) suicide formation, which is promising for salicidation applications in deep sub-quarter micron devices, was investigated. TEM, SIMS, and XRD data suggest that Ti on top of the cobalt layer diffuses into the Co/Si interface and dissociates the thin silicon oxide at the interface during RTA. As a result, with a Co/Ti process, the sensitivity of Co salicide process to surface condition could be minimized, which gives a larger process window to fabricate deep sub-quarter micron devices.

Original languageEnglish
Title of host publicationProceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages256-258
Number of pages3
ISBN (Electronic)0780351746, 9780780351745
DOIs
Publication statusPublished - 1999 Jan 1
Event1999 IEEE International Interconnect Technology Conference, IITC 1999 - San Francisco, United States
Duration: 1999 May 241999 May 26

Publication series

NameProceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Other

Other1999 IEEE International Interconnect Technology Conference, IITC 1999
CountryUnited States
CitySan Francisco
Period99/5/2499/5/26

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Process Chemistry and Technology

Cite this

Ku, J. H., Kim, C. S., Choi, C. J., Fujihara, K., Kang, H. K., Lee, M. Y., Chung, J. H., Lee, E. J., Lee, J. E., & Ko, D. H. (1999). New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology. In Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999 (pp. 256-258). [787137] (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.1999.787137