New fault detection algorithm for multi-level cell flash memories

Jaewon Cha, Ilwoong Kim, Sungho Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

With a development of high-capacity flash memory, a variety of applications have been featured in the current market. Since the density per unit area of multi-level cell flash memory (MLC), is doubled compared with single level cell flash memory (SLC), the MLC is widely used in flash memory. However, it is difficult to efficiently test the MLC. In order to test the MLC with low test time and low test cost, a new test algorithm for the MLC is proposed. The performance of the proposed algorithm is better than existing algorithms.

Original languageEnglish
Title of host publicationProceedings of the 20th Asian Test Symposium, ATS 2011
Pages341-346
Number of pages6
DOIs
Publication statusPublished - 2011 Dec 1
Event20th Asian Test Symposium, ATS 2011 - New Delhi, India
Duration: 2011 Nov 202011 Nov 23

Publication series

NameProceedings of the Asian Test Symposium
ISSN (Print)1081-7735

Other

Other20th Asian Test Symposium, ATS 2011
CountryIndia
CityNew Delhi
Period11/11/2011/11/23

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Cha, J., Kim, I., & Kang, S. (2011). New fault detection algorithm for multi-level cell flash memories. In Proceedings of the 20th Asian Test Symposium, ATS 2011 (pp. 341-346). [6114753] (Proceedings of the Asian Test Symposium). https://doi.org/10.1109/ATS.2011.13