New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature

Jin Nyoung Jang, Dong Hyeok Lee, Hyun Wook So, Chang Sun Park, Hyung-Ho Park, Mun Pyo Hong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The neutral beam assisted chemical vapor deposition (NBaCVD) system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particle beam. During the deposition process, energetic hydrogen (H) neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (Xc) up to 85%) and dopant activation (∼1×10 20 #/cm 3 , ∼30 cm 2 /Vs) with low H ratio at near room temperature on the substrate. The increase of H neutral beam flux induces transition of crystal orientation from [111] to [311] at constant Xc and changes the carrier transport path from "grain boundary path" to "grain-to-grain percolation path" and enhances bulk mobility of the Si thin film. The various analysis data of the thin films (XRD, Raman, temperature dependent conductivity, Hall measurement) represent the evidence of very high doping efficiency at near room temperature, obvious nano-crystalline embedded polymorphous phase, and mixed transport (band and percolation) characteristics.

Original languageEnglish
Title of host publicationNanocrystal Embedded Dielectrics for Electronic and Photonic Devices
Pages53-59
Number of pages7
Edition4
DOIs
Publication statusPublished - 2013 Oct 21
EventNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 2013 May 122013 May 16

Publication series

NameECS Transactions
Number4
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period13/5/1213/5/16

Fingerprint

Crystal growth
Chemical vapor deposition
Doping (additives)
Thin films
Silicon
Crystalline materials
Particle beams
Hydrogen
Carrier transport
Crystal orientation
Temperature
Volume fraction
Grain boundaries
Crystallization
Chemical activation
Fluxes
Control systems
Atoms
Crystals
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Jang, J. N., Lee, D. H., So, H. W., Park, C. S., Park, H-H., & Hong, M. P. (2013). New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature. In Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices (4 ed., pp. 53-59). (ECS Transactions; Vol. 53, No. 4). https://doi.org/10.1149/05304.0053ecst
Jang, Jin Nyoung ; Lee, Dong Hyeok ; So, Hyun Wook ; Park, Chang Sun ; Park, Hyung-Ho ; Hong, Mun Pyo. / New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature. Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices. 4. ed. 2013. pp. 53-59 (ECS Transactions; 4).
@inproceedings{837785d9b0704a49a440bdc43e1c28ba,
title = "New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature",
abstract = "The neutral beam assisted chemical vapor deposition (NBaCVD) system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particle beam. During the deposition process, energetic hydrogen (H) neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (Xc) up to 85{\%}) and dopant activation (∼1×10 20 #/cm 3 , ∼30 cm 2 /Vs) with low H ratio at near room temperature on the substrate. The increase of H neutral beam flux induces transition of crystal orientation from [111] to [311] at constant Xc and changes the carrier transport path from {"}grain boundary path{"} to {"}grain-to-grain percolation path{"} and enhances bulk mobility of the Si thin film. The various analysis data of the thin films (XRD, Raman, temperature dependent conductivity, Hall measurement) represent the evidence of very high doping efficiency at near room temperature, obvious nano-crystalline embedded polymorphous phase, and mixed transport (band and percolation) characteristics.",
author = "Jang, {Jin Nyoung} and Lee, {Dong Hyeok} and So, {Hyun Wook} and Park, {Chang Sun} and Hyung-Ho Park and Hong, {Mun Pyo}",
year = "2013",
month = "10",
day = "21",
doi = "10.1149/05304.0053ecst",
language = "English",
isbn = "9781607683773",
series = "ECS Transactions",
number = "4",
pages = "53--59",
booktitle = "Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices",
edition = "4",

}

Jang, JN, Lee, DH, So, HW, Park, CS, Park, H-H & Hong, MP 2013, New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature. in Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices. 4 edn, ECS Transactions, no. 4, vol. 53, pp. 53-59, Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting, Toronto, ON, Canada, 13/5/12. https://doi.org/10.1149/05304.0053ecst

New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature. / Jang, Jin Nyoung; Lee, Dong Hyeok; So, Hyun Wook; Park, Chang Sun; Park, Hyung-Ho; Hong, Mun Pyo.

Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices. 4. ed. 2013. p. 53-59 (ECS Transactions; Vol. 53, No. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature

AU - Jang, Jin Nyoung

AU - Lee, Dong Hyeok

AU - So, Hyun Wook

AU - Park, Chang Sun

AU - Park, Hyung-Ho

AU - Hong, Mun Pyo

PY - 2013/10/21

Y1 - 2013/10/21

N2 - The neutral beam assisted chemical vapor deposition (NBaCVD) system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particle beam. During the deposition process, energetic hydrogen (H) neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (Xc) up to 85%) and dopant activation (∼1×10 20 #/cm 3 , ∼30 cm 2 /Vs) with low H ratio at near room temperature on the substrate. The increase of H neutral beam flux induces transition of crystal orientation from [111] to [311] at constant Xc and changes the carrier transport path from "grain boundary path" to "grain-to-grain percolation path" and enhances bulk mobility of the Si thin film. The various analysis data of the thin films (XRD, Raman, temperature dependent conductivity, Hall measurement) represent the evidence of very high doping efficiency at near room temperature, obvious nano-crystalline embedded polymorphous phase, and mixed transport (band and percolation) characteristics.

AB - The neutral beam assisted chemical vapor deposition (NBaCVD) system can control the crystalline phase and the doping efficiency simultaneously by the energy of impinge neutral particle beam. During the deposition process, energetic hydrogen (H) neutral atoms transport their energy to the surface of depositing film to enhance crystallization (crystal volume fraction (Xc) up to 85%) and dopant activation (∼1×10 20 #/cm 3 , ∼30 cm 2 /Vs) with low H ratio at near room temperature on the substrate. The increase of H neutral beam flux induces transition of crystal orientation from [111] to [311] at constant Xc and changes the carrier transport path from "grain boundary path" to "grain-to-grain percolation path" and enhances bulk mobility of the Si thin film. The various analysis data of the thin films (XRD, Raman, temperature dependent conductivity, Hall measurement) represent the evidence of very high doping efficiency at near room temperature, obvious nano-crystalline embedded polymorphous phase, and mixed transport (band and percolation) characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84885576630&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885576630&partnerID=8YFLogxK

U2 - 10.1149/05304.0053ecst

DO - 10.1149/05304.0053ecst

M3 - Conference contribution

AN - SCOPUS:84885576630

SN - 9781607683773

T3 - ECS Transactions

SP - 53

EP - 59

BT - Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices

ER -

Jang JN, Lee DH, So HW, Park CS, Park H-H, Hong MP. New mechanism for incline crystal growth and carrier path transistion in extremely highly doped polymorphous silicon thin film formated by neutral beam assisted CVD process near room temperature. In Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices. 4 ed. 2013. p. 53-59. (ECS Transactions; 4). https://doi.org/10.1149/05304.0053ecst