New model for low-frequency noise in poly-Si resistors

Jungil Lee, Iiki Man, Soo Kyung Chang, Eunkyu Kim, Myoung Bok Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper presents a simple and novel model for low-frequency noise generation in polycrystalline-Si resistors within the number fluctuation model. The grain boundary in polycrystalline-Si thin films is the major source of noise and is modeled as independent symmetric Schottky barriers in series, face-to-face. It has been found that trapping and detrapping of the carriers at the traps in the space charge region of the grain boundary via thermal activation modulate the barrier height and generate the low-frequency noise. The model successfully explains the experimental data and gives useful information about the defects in the space charge region of the grain boundary. As a result, the Hooge parameter is interpreted in terms of defect density, among other parameters.

Original languageEnglish
Pages (from-to)1054-1059
Number of pages6
JournalKey Engineering Materials
Volume277-279
Issue numberI
DOIs
Publication statusPublished - 2005 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'New model for low-frequency noise in poly-Si resistors'. Together they form a unique fingerprint.

  • Cite this