New modeling of switching devices considering power loss in electromagnetic transients program simulation

Seung Tak Kim, Jung Wook Park, Seung Mook Baek

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a userdefined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.

Original languageEnglish
Pages (from-to)592-601
Number of pages10
JournalJournal of Electrical Engineering and Technology
Volume11
Issue number3
DOIs
Publication statusPublished - 2016 May 1

Fingerprint

Insulated gate bipolar transistors (IGBT)
Curve fitting
Interpolation
Diodes
Physical properties
Hardware
Recovery
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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abstract = "This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a userdefined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.",
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New modeling of switching devices considering power loss in electromagnetic transients program simulation. / Kim, Seung Tak; Park, Jung Wook; Baek, Seung Mook.

In: Journal of Electrical Engineering and Technology, Vol. 11, No. 3, 01.05.2016, p. 592-601.

Research output: Contribution to journalArticle

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