This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a userdefined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.
Bibliographical noteFunding Information:
This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0028065) and in part by the Power Generation & Electricity Delivery Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20141020402340).
© The Korean Institute of Electrical Engineers.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering