@inproceedings{361cabe6d7774318bf17ae8f793d517f,
title = "New passivation of GaAs Schottky contact using sulfidation and hydrogenation",
abstract = "We report a novel method that can improve the Schottky property of Au/GaAs contact. The passivation technology was designed to control the defective states originated from two kinds of situations: i) air oxidation of GaAs surface before Schottky metallization, and ii) interfacial reaction during the metallization. In carefully controlled condition, the excellent Schottky contact was realized by sulfidation of GaAs surface and H-plasma treatment of Au/S-passivated GaAs interface.",
author = "Kang, {Min Gu} and Kim, {Ji Wan} and Park, {Hyung Ho}",
year = "2000",
doi = "10.1109/IMNC.2000.872722",
language = "English",
series = "Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "220--221",
booktitle = "Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000",
address = "United States",
note = "International Microprocesses and Nanotechnology Conference, MNC 2000 ; Conference date: 11-07-2000 Through 13-07-2000",
}