New passivation of GaAs Schottky contact using sulfidation and hydrogenation

Min Gu Kang, Ji Wan Kim, Hyung Ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a novel method that can improve the Schottky property of Au/GaAs contact. The passivation technology was designed to control the defective states originated from two kinds of situations: i) air oxidation of GaAs surface before Schottky metallization, and ii) interfacial reaction during the metallization. In carefully controlled condition, the excellent Schottky contact was realized by sulfidation of GaAs surface and H-plasma treatment of Au/S-passivated GaAs interface.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages220-221
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
Publication statusPublished - 2000 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period00/7/1100/7/13

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kang, M. G., Kim, J. W., & Park, H. H. (2000). New passivation of GaAs Schottky contact using sulfidation and hydrogenation. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 220-221). [872722] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872722