New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime

Min Chul Park; Gi Yeong Yang; Joon Sung Yang; Keun Ho Lee; Young Kwan Park

doi:10.1109/SISPAD.2014.6931632

New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime

Min Chul Park, Gi Yeong Yang, Joon Sung Yang, Keun Ho Lee, Young Kwan Park

College of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (t_PD), degradation in the light of new findings.

Original language	English
Title of host publication	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	337-340
Number of pages	4
ISBN (Electronic)	9781479952885
DOIs	https://doi.org/10.1109/SISPAD.2014.6931632
Publication status	Published - 2014 Oct 20
Event	2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 - Yokohama, Japan Duration: 2014 Sep 9 → 2014 Sep 11

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
Country	Japan
City	Yokohama
Period	14/9/9 → 14/9/11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

10.1109/SISPAD.2014.6931632

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Cite this

Park, M. C., Yang, G. Y., Yang, J. S., Lee, K. H., & Park, Y. K. (2014). New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 337-340). [6931632] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2014.6931632

Park, Min Chul ; Yang, Gi Yeong ; Yang, Joon Sung ; Lee, Keun Ho ; Park, Young Kwan. / New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 337-340 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{1822f3f6880f4766b5b4f8923a653d8d,

title = "New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime",

abstract = "Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (tPD), degradation in the light of new findings.",

author = "Park, {Min Chul} and Yang, {Gi Yeong} and Yang, {Joon Sung} and Lee, {Keun Ho} and Park, {Young Kwan}",

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series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "337--340",

booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

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note = "2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 ; Conference date: 09-09-2014 Through 11-09-2014",

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Park, MC, Yang, GY, Yang, JS, Lee, KH & Park, YK 2014, New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 6931632, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., pp. 337-340, 2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014, Yokohama, Japan, 14/9/9. https://doi.org/10.1109/SISPAD.2014.6931632

New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime. / Park, Min Chul; Yang, Gi Yeong; Yang, Joon Sung; Lee, Keun Ho; Park, Young Kwan.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Institute of Electrical and Electronics Engineers Inc., 2014. p. 337-340 6931632 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Park, Min Chul

AU - Yang, Gi Yeong

AU - Yang, Joon Sung

AU - Lee, Keun Ho

AU - Park, Young Kwan

PY - 2014/10/20

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N2 - Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (tPD), degradation in the light of new findings.

AB - Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (tPD), degradation in the light of new findings.

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BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

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Park MC, Yang GY, Yang JS, Lee KH, Park YK. New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Institute of Electrical and Electronics Engineers Inc. 2014. p. 337-340. 6931632. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2014.6931632