New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime

Min Chul Park, Gi Yeong Yang, Joon Sung Yang, Keun Ho Lee, Young Kwan Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (tPD), degradation in the light of new findings.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages337-340
Number of pages4
ISBN (Electronic)9781479952885
DOIs
Publication statusPublished - 2014 Oct 20
Event2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 - Yokohama, Japan
Duration: 2014 Sep 92014 Sep 11

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
CountryJapan
CityYokohama
Period14/9/914/9/11

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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  • Cite this

    Park, M. C., Yang, G. Y., Yang, J. S., Lee, K. H., & Park, Y. K. (2014). New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 337-340). [6931632] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2014.6931632