@inproceedings{1822f3f6880f4766b5b4f8923a653d8d,
title = "New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime",
abstract = "Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (tPD), degradation in the light of new findings.",
author = "Park, {Min Chul} and Yang, {Gi Yeong} and Yang, {Joon Sung} and Lee, {Keun Ho} and Park, {Young Kwan}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.; 2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 ; Conference date: 09-09-2014 Through 11-09-2014",
year = "2014",
month = oct,
day = "20",
doi = "10.1109/SISPAD.2014.6931632",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "337--340",
booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
address = "United States",
}