Abstract
In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.
| Original language | English |
|---|---|
| Title of host publication | 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781479942039 |
| DOIs | |
| Publication status | Published - 2015 Mar 13 |
| Event | 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 - Jeju Island, Korea, Republic of Duration: 2014 Oct 27 → 2014 Oct 29 |
Other
| Other | 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 |
|---|---|
| Country | Korea, Republic of |
| City | Jeju Island |
| Period | 14/10/27 → 14/10/29 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
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New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. / Jeong, Jin Hwan; Choi, Doo Jin.
2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7060868.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films
AU - Jeong, Jin Hwan
AU - Choi, Doo Jin
PY - 2015/3/13
Y1 - 2015/3/13
N2 - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.
AB - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.
UR - http://www.scopus.com/inward/record.url?scp=84936816593&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84936816593&partnerID=8YFLogxK
U2 - 10.1109/NVMTS.2014.7060868
DO - 10.1109/NVMTS.2014.7060868
M3 - Conference contribution
BT - 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -