New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films

Jin Hwan Jeong; Doo Jin Choi

doi:10.1109/NVMTS.2014.7060868

New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films

Jin Hwan Jeong, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

Original language	English
Title of host publication	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479942039
DOIs	https://doi.org/10.1109/NVMTS.2014.7060868
Publication status	Published - 2015 Mar 13
Event	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 - Jeju Island, Korea, Republic of Duration: 2014 Oct 27 → 2014 Oct 29

Publication series

Name	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014

Other

Other	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Country	Korea, Republic of
City	Jeju Island
Period	14/10/27 → 14/10/29

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All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Jeong, J. H., & Choi, D. J. (2015). New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. In 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 [7060868] (2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NVMTS.2014.7060868

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abstract = "In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.",

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Jeong, JH & Choi, DJ 2015, New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. in 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014., 7060868, 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014, Institute of Electrical and Electronics Engineers Inc., 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014, Jeju Island, Korea, Republic of, 14/10/27. https://doi.org/10.1109/NVMTS.2014.7060868

New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. / Jeong, Jin Hwan; Choi, Doo Jin.

2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7060868 (2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

AB - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

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Jeong JH, Choi DJ. New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. In 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc. 2015. 7060868. (2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014). https://doi.org/10.1109/NVMTS.2014.7060868

Access to Document

10.1109/NVMTS.2014.7060868