New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films

Jin Hwan Jeong; Doo Jin Choi

doi:10.1109/NVMTS.2014.7060868

New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films

Jin Hwan Jeong, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

Original language	English
Title of host publication	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479942039
DOIs	https://doi.org/10.1109/NVMTS.2014.7060868
Publication status	Published - 2015 Mar 13
Event	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 - Jeju Island, Korea, Republic of Duration: 2014 Oct 27 → 2014 Oct 29

Publication series

Name	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014

Other

Other	2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Country/Territory	Korea, Republic of
City	Jeju Island
Period	14/10/27 → 14/10/29

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/NVMTS.2014.7060868

Cite this

Jeong, J. H., & Choi, D. J. (2015). New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. In 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 [7060868] (2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NVMTS.2014.7060868

@inproceedings{9df09d324f294dab8a211db6583ba2f0,

title = "New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films",

abstract = "In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.",

author = "Jeong, {Jin Hwan} and Choi, {Doo Jin}",

year = "2015",

month = mar,

day = "13",

doi = "10.1109/NVMTS.2014.7060868",

language = "English",

series = "2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014",

address = "United States",

note = "2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 ; Conference date: 27-10-2014 Through 29-10-2014",

}

Jeong, JH & Choi, DJ 2015, New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. in 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014., 7060868, 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014, Institute of Electrical and Electronics Engineers Inc., 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014, Jeju Island, Korea, Republic of, 14/10/27. https://doi.org/10.1109/NVMTS.2014.7060868

New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. / Jeong, Jin Hwan; Choi, Doo Jin.

2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7060868 (2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films

AU - Jeong, Jin Hwan

AU - Choi, Doo Jin

PY - 2015/3/13

Y1 - 2015/3/13

N2 - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

AB - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

UR - http://www.scopus.com/inward/record.url?scp=84936816593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84936816593&partnerID=8YFLogxK

U2 - 10.1109/NVMTS.2014.7060868

DO - 10.1109/NVMTS.2014.7060868

M3 - Conference contribution

T3 - 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014

BT - 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014

Y2 - 27 October 2014 through 29 October 2014

ER -

Jeong JH, Choi DJ. New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. In 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc. 2015. 7060868. (2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014). https://doi.org/10.1109/NVMTS.2014.7060868

New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this