New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films

Jin Hwan Jeong, Doo Jin Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

Original languageEnglish
Title of host publication2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479942039
DOIs
Publication statusPublished - 2015 Mar 13
Event2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 - Jeju Island, Korea, Republic of
Duration: 2014 Oct 272014 Oct 29

Publication series

Name2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014

Other

Other2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
CountryKorea, Republic of
CityJeju Island
Period14/10/2714/10/29

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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