New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films

Jin Hwan Jeong, Doo Jin Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

Original languageEnglish
Title of host publication2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479942039
DOIs
Publication statusPublished - 2015 Mar 13
Event2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 - Jeju Island, Korea, Republic of
Duration: 2014 Oct 272014 Oct 29

Other

Other2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
CountryKorea, Republic of
CityJeju Island
Period14/10/2714/10/29

Fingerprint

Plasma sheaths
Vapor deposition
Plasmas
Data storage equipment
Thermal energy
Energy dissipation
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Jeong, J. H., & Choi, D. J. (2015). New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. In 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014 [7060868] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NVMTS.2014.7060868
Jeong, Jin Hwan ; Choi, Doo Jin. / New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc., 2015.
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Jeong, JH & Choi, DJ 2015, New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. in 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014., 7060868, Institute of Electrical and Electronics Engineers Inc., 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014, Jeju Island, Korea, Republic of, 14/10/27. https://doi.org/10.1109/NVMTS.2014.7060868

New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. / Jeong, Jin Hwan; Choi, Doo Jin.

2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7060868.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.

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Jeong JH, Choi DJ. New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films. In 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014. Institute of Electrical and Electronics Engineers Inc. 2015. 7060868 https://doi.org/10.1109/NVMTS.2014.7060868