TY - GEN
T1 - New screened plasma-enhanced atomic vapor deposition to improve trench covering ability of SbTe films
AU - Jeong, Jin Hwan
AU - Choi, Doo Jin
PY - 2015/3/13
Y1 - 2015/3/13
N2 - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.
AB - In this paper, a new screened plasma-enhanced atomic vapor deposition technique was studied for increasing trench covering ability of Sb-Te phase change film. Trench-structure cells of phase change random access memory can lower thermal energy loss and thermal cross-talk among adjacent memory cells. Using a plasma sheath effect with metallic mesh inside a reaction chamber, a step coverage was greatly increased in various experimental conditions. With consideration of a model of the plasma sheath, the trench covering ability of the films was evaluated and we expect this research to provide a new deposition method for the fine control of step coverage.
UR - http://www.scopus.com/inward/record.url?scp=84936816593&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84936816593&partnerID=8YFLogxK
U2 - 10.1109/NVMTS.2014.7060868
DO - 10.1109/NVMTS.2014.7060868
M3 - Conference contribution
T3 - 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
BT - 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 14th Annual Non-Volatile Memory Technology Symposium, NVMTS 2014
Y2 - 27 October 2014 through 29 October 2014
ER -