A new Self-Aligned Asymmetric Structure (SAAS) which has asymmetric halo at the highly doped source extension is proposed and optimized for sub-0.1 μm MOSFET technology. The fabrication process for the asymmetric structure requires no additional masks. The hydrodynamic device simulation coupled with process simulation shows that the highly doped asymmetric halo enhances the velocity overshoot at the source side and suppresses the short channel effects. The degradation of device performance caused by increased resistance in the highly doped halo is reduced by the asymmetric drain structure with low parasitic resistance.
|Number of pages||4|
|Publication status||Published - 2000 Dec 1|
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