New Self-Aligned Asymmetric Structure (SAAS) for 0.1 μm MOSFET technology

Chang Soon Choi, Kyung Whan Kim, Woo Young Choi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

A new Self-Aligned Asymmetric Structure (SAAS) which has asymmetric halo at the highly doped source extension is proposed and optimized for sub-0.1 μm MOSFET technology. The fabrication process for the asymmetric structure requires no additional masks. The hydrodynamic device simulation coupled with process simulation shows that the highly doped asymmetric halo enhances the velocity overshoot at the source side and suppresses the short channel effects. The degradation of device performance caused by increased resistance in the highly doped halo is reduced by the asymmetric drain structure with low parasitic resistance.

Original languageEnglish
Pages60-63
Number of pages4
Publication statusPublished - 2000 Dec 1

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Masks
Hydrodynamics
Fabrication
Degradation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "A new Self-Aligned Asymmetric Structure (SAAS) which has asymmetric halo at the highly doped source extension is proposed and optimized for sub-0.1 μm MOSFET technology. The fabrication process for the asymmetric structure requires no additional masks. The hydrodynamic device simulation coupled with process simulation shows that the highly doped asymmetric halo enhances the velocity overshoot at the source side and suppresses the short channel effects. The degradation of device performance caused by increased resistance in the highly doped halo is reduced by the asymmetric drain structure with low parasitic resistance.",
author = "Choi, {Chang Soon} and Kim, {Kyung Whan} and Choi, {Woo Young}",
year = "2000",
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}

New Self-Aligned Asymmetric Structure (SAAS) for 0.1 μm MOSFET technology. / Choi, Chang Soon; Kim, Kyung Whan; Choi, Woo Young.

2000. 60-63.

Research output: Contribution to conferencePaper

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AU - Kim, Kyung Whan

AU - Choi, Woo Young

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N2 - A new Self-Aligned Asymmetric Structure (SAAS) which has asymmetric halo at the highly doped source extension is proposed and optimized for sub-0.1 μm MOSFET technology. The fabrication process for the asymmetric structure requires no additional masks. The hydrodynamic device simulation coupled with process simulation shows that the highly doped asymmetric halo enhances the velocity overshoot at the source side and suppresses the short channel effects. The degradation of device performance caused by increased resistance in the highly doped halo is reduced by the asymmetric drain structure with low parasitic resistance.

AB - A new Self-Aligned Asymmetric Structure (SAAS) which has asymmetric halo at the highly doped source extension is proposed and optimized for sub-0.1 μm MOSFET technology. The fabrication process for the asymmetric structure requires no additional masks. The hydrodynamic device simulation coupled with process simulation shows that the highly doped asymmetric halo enhances the velocity overshoot at the source side and suppresses the short channel effects. The degradation of device performance caused by increased resistance in the highly doped halo is reduced by the asymmetric drain structure with low parasitic resistance.

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