New top-down approach for fabricating high-aspect-ratio complex nanostructures with 10 nm scale features

Hwan Jin Jeon, Kyoung Hwan Kim, Youn Kyoung Baek, Dae Woo Kim, Hee Tae Jung

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)

Abstract

We describe a new patterning technique, named "secondary sputtering lithography" that enables fabrication of ultrahigh-resolution (ca. 10 nm) and high aspect ratio (ca. 15) patterns of three-dimensional various shapes. In this methodology, target materials are etched and deposited onto the side surface of a prepatterned polymer by using low Ar ion bombarding energies, based on the angular distribution of target particles by ion-beam bombardment. After removal of the prepatterned polymer, high aspect ratios and high-resolution patterns of target materials are created.

Original languageEnglish
Pages (from-to)3604-3610
Number of pages7
JournalNano letters
Volume10
Issue number9
DOIs
Publication statusPublished - 2010 Sep 8

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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