New top-down approach for fabricating high-aspect-ratio complex nanostructures with 10 nm scale features

Hwan Jin Jeon, Kyoung Hwan Kim, Youn Kyoung Baek, Dae Woo Kim, Hee Tae Jung

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

We describe a new patterning technique, named "secondary sputtering lithography" that enables fabrication of ultrahigh-resolution (ca. 10 nm) and high aspect ratio (ca. 15) patterns of three-dimensional various shapes. In this methodology, target materials are etched and deposited onto the side surface of a prepatterned polymer by using low Ar ion bombarding energies, based on the angular distribution of target particles by ion-beam bombardment. After removal of the prepatterned polymer, high aspect ratios and high-resolution patterns of target materials are created.

Original languageEnglish
Pages (from-to)3604-3610
Number of pages7
JournalNano letters
Volume10
Issue number9
DOIs
Publication statusPublished - 2010 Sep 8

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high aspect ratio
Aspect ratio
Nanostructures
Polymers
Angular distribution
Lithography
Ion beams
Sputtering
polymers
Ions
Fabrication
bombardment
angular distribution
lithography
sputtering
ion beams
methodology
fabrication
high resolution
ions

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Jeon, Hwan Jin ; Kim, Kyoung Hwan ; Baek, Youn Kyoung ; Kim, Dae Woo ; Jung, Hee Tae. / New top-down approach for fabricating high-aspect-ratio complex nanostructures with 10 nm scale features. In: Nano letters. 2010 ; Vol. 10, No. 9. pp. 3604-3610.
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New top-down approach for fabricating high-aspect-ratio complex nanostructures with 10 nm scale features. / Jeon, Hwan Jin; Kim, Kyoung Hwan; Baek, Youn Kyoung; Kim, Dae Woo; Jung, Hee Tae.

In: Nano letters, Vol. 10, No. 9, 08.09.2010, p. 3604-3610.

Research output: Contribution to journalArticle

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