NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4

Hoon Jung Oh, Joo Hee Lee, Min Seon Lee, Woo Gon Shin, Sung Yong Kang, Gyu Dong Kim, Dae Hong Ko

Research output: Contribution to journalConference articlepeer-review

13 Citations (Scopus)


To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalECS Transactions
Issue number38
Publication statusPublished - 2014
EventSymposium on Solid State Topics General Session - 225th ECS Meeting - Orlando, United States
Duration: 2014 May 112014 May 15

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

All Science Journal Classification (ASJC) codes

  • Engineering(all)


Dive into the research topics of 'NF<sub>3</sub>/NH<sub>3</sub> dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO<sub>2</sub>, and Si<sub>3</sub>N<sub>4</sub>'. Together they form a unique fingerprint.

Cite this