NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4

Hoon Jung Oh, Joo Hee Lee, Min Seon Lee, Woo Gon Shin, Sung Yong Kang, Gyu Dong Kim, Dae Hong Ko

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalECS Transactions
Volume61
Issue number38
DOIs
Publication statusPublished - 2014 Jan 1
EventSymposium on Solid State Topics General Session - 225th ECS Meeting - Orlando, United States
Duration: 2014 May 112014 May 15

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Dry cleaning
Surface treatment
Byproducts
Plasmas
Plasma flow
Sublimation
Photoelectron spectroscopy
Atomic force microscopy
Transmission electron microscopy
X rays
Scanning electron microscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Oh, Hoon Jung ; Lee, Joo Hee ; Lee, Min Seon ; Shin, Woo Gon ; Kang, Sung Yong ; Kim, Gyu Dong ; Ko, Dae Hong. / NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4. In: ECS Transactions. 2014 ; Vol. 61, No. 38. pp. 1-8.
@article{a1455ce6d20543b68a1bef9d11199b20,
title = "NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4",
abstract = "To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.",
author = "Oh, {Hoon Jung} and Lee, {Joo Hee} and Lee, {Min Seon} and Shin, {Woo Gon} and Kang, {Sung Yong} and Kim, {Gyu Dong} and Ko, {Dae Hong}",
year = "2014",
month = "1",
day = "1",
doi = "10.1149/06138.0001ecst",
language = "English",
volume = "61",
pages = "1--8",
journal = "ECS Transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc.",
number = "38",

}

NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4. / Oh, Hoon Jung; Lee, Joo Hee; Lee, Min Seon; Shin, Woo Gon; Kang, Sung Yong; Kim, Gyu Dong; Ko, Dae Hong.

In: ECS Transactions, Vol. 61, No. 38, 01.01.2014, p. 1-8.

Research output: Contribution to journalConference article

TY - JOUR

T1 - NF3/NH3 dry cleaning mechanism inspired by chemical and physical surface modification of Si, SiO2, and Si3N4

AU - Oh, Hoon Jung

AU - Lee, Joo Hee

AU - Lee, Min Seon

AU - Shin, Woo Gon

AU - Kang, Sung Yong

AU - Kim, Gyu Dong

AU - Ko, Dae Hong

PY - 2014/1/1

Y1 - 2014/1/1

N2 - To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.

AB - To understand the NF3/NH3 dry cleaning mechanism, we have investigated the dry cleaning process with different Si-based materials, Si, SiO2, and Si3N4 using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS) in terms of surface modification. In this paper, we report that the NF3/NH3 dry cleaning process using down-flow plasma technique can cause significant surface modification on SiO2 depending on the NF3:NH3 ratio and plasma power of the plasma reaction before (NH4)2SiF6 by-product sublimation step. These results might provide empirical evidence that there are competing reaction pathways producing different intermediate species on SiO2 surface to form (NH4)2SiF6 by-product depending on the process conditions. A possible mechanism is presented.

UR - http://www.scopus.com/inward/record.url?scp=84925292925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925292925&partnerID=8YFLogxK

U2 - 10.1149/06138.0001ecst

DO - 10.1149/06138.0001ecst

M3 - Conference article

VL - 61

SP - 1

EP - 8

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 38

ER -