Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs

Ying Ying Zhang, Jungwoo Oh, Shi Guang Li, Soon Yen Jung, Kee Young Park, Hong Sik Shin, Ga Won Lee, Jin Suk Wang, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, Tae Sung Bae, Hi Deok Lee

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18 Citations (Scopus)

Abstract

In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.

Original languageEnglish
Pages (from-to)H18-H20
JournalElectrochemical and Solid-State Letters
Volume12
Issue number1
DOIs
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Zhang, Y. Y., Oh, J., Li, S. G., Jung, S. Y., Park, K. Y., Shin, H. S., Lee, G. W., Wang, J. S., Majhi, P., Tseng, H. H., Jammy, R., Bae, T. S., & Lee, H. D. (2008). Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs. Electrochemical and Solid-State Letters, 12(1), H18-H20. https://doi.org/10.1149/1.3006319