Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs

Ying Ying Zhang, Jungwoo Oh, Shi Guang Li, Soon Yen Jung, Kee Young Park, Hong Sik Shin, Ga Won Lee, Jin Suk Wang, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, Tae Sung Bae, Hi Deok Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number1
DOIs
Publication statusPublished - 2008 Nov 19

Fingerprint

Ytterbium
MOSFET devices
ytterbium
metal oxide semiconductors
interlayers
field effect transistors
agglomeration
Thermodynamic stability
thermal stability
Agglomeration
Surface morphology
retarding
Annealing
Atoms
annealing
atoms

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Zhang, Ying Ying ; Oh, Jungwoo ; Li, Shi Guang ; Jung, Soon Yen ; Park, Kee Young ; Shin, Hong Sik ; Lee, Ga Won ; Wang, Jin Suk ; Majhi, Prashant ; Tseng, Hsing Huang ; Jammy, Raj ; Bae, Tae Sung ; Lee, Hi Deok. / Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs. In: Electrochemical and Solid-State Letters. 2008 ; Vol. 12, No. 1.
@article{cd91444e426846a3b8c9fe88e9f1408d,
title = "Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs",
abstract = "In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.",
author = "Zhang, {Ying Ying} and Jungwoo Oh and Li, {Shi Guang} and Jung, {Soon Yen} and Park, {Kee Young} and Shin, {Hong Sik} and Lee, {Ga Won} and Wang, {Jin Suk} and Prashant Majhi and Tseng, {Hsing Huang} and Raj Jammy and Bae, {Tae Sung} and Lee, {Hi Deok}",
year = "2008",
month = "11",
day = "19",
doi = "10.1149/1.3006319",
language = "English",
volume = "12",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

Zhang, YY, Oh, J, Li, SG, Jung, SY, Park, KY, Shin, HS, Lee, GW, Wang, JS, Majhi, P, Tseng, HH, Jammy, R, Bae, TS & Lee, HD 2008, 'Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs', Electrochemical and Solid-State Letters, vol. 12, no. 1. https://doi.org/10.1149/1.3006319

Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs. / Zhang, Ying Ying; Oh, Jungwoo; Li, Shi Guang; Jung, Soon Yen; Park, Kee Young; Shin, Hong Sik; Lee, Ga Won; Wang, Jin Suk; Majhi, Prashant; Tseng, Hsing Huang; Jammy, Raj; Bae, Tae Sung; Lee, Hi Deok.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 1, 19.11.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs

AU - Zhang, Ying Ying

AU - Oh, Jungwoo

AU - Li, Shi Guang

AU - Jung, Soon Yen

AU - Park, Kee Young

AU - Shin, Hong Sik

AU - Lee, Ga Won

AU - Wang, Jin Suk

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Jammy, Raj

AU - Bae, Tae Sung

AU - Lee, Hi Deok

PY - 2008/11/19

Y1 - 2008/11/19

N2 - In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.

AB - In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.

UR - http://www.scopus.com/inward/record.url?scp=56049092564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56049092564&partnerID=8YFLogxK

U2 - 10.1149/1.3006319

DO - 10.1149/1.3006319

M3 - Article

AN - SCOPUS:56049092564

VL - 12

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 1

ER -