Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs

Ying Ying Zhang; Jungwoo Oh; Shi Guang Li; Soon Yen Jung; Kee Young Park; Hong Sik Shin; Ga Won Lee; Jin Suk Wang; Prashant Majhi; Hsing Huang Tseng; Raj Jammy; Tae Sung Bae; Hi Deok Lee

doi:10.1149/1.3006319

Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs

Ying Ying Zhang, Jungwoo Oh, Shi Guang Li, Soon Yen Jung, Kee Young Park, Hong Sik Shin, Ga Won Lee, Jin Suk Wang, Prashant Majhi, Hsing Huang Tseng, Raj Jammy, Tae Sung Bae, Hi Deok Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.

Original language	English
Pages (from-to)	H18-H20
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1149/1.3006319
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3006319

Cite this

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title = "Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs",

abstract = "In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.",

author = "Zhang, {Ying Ying} and Jungwoo Oh and Li, {Shi Guang} and Jung, {Soon Yen} and Park, {Kee Young} and Shin, {Hong Sik} and Lee, {Ga Won} and Wang, {Jin Suk} and Prashant Majhi and Tseng, {Hsing Huang} and Raj Jammy and Bae, {Tae Sung} and Lee, {Hi Deok}",

year = "2008",

doi = "10.1149/1.3006319",

language = "English",

volume = "12",

pages = "H18--H20",

journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs

AU - Zhang, Ying Ying

AU - Oh, Jungwoo

AU - Li, Shi Guang

AU - Jung, Soon Yen

AU - Park, Kee Young

AU - Shin, Hong Sik

AU - Lee, Ga Won

AU - Wang, Jin Suk

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Jammy, Raj

AU - Bae, Tae Sung

AU - Lee, Hi Deok

PY - 2008

Y1 - 2008

N2 - In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.

AB - In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The YbNiTiN structure shows suppression of NiGe agglomeration and better surface morphology than the NiTiN structure after a postgermanidation annealing of up to 550°C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.

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JF - Electrochemical and Solid-State Letters

IS - 1

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Ni germanide utilizing Ytterbium interlayer for high-performance Ge MOSFETs

Abstract

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