Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi

Sunil Babu Eadi, Hyeong Sub Song, Hyun Dong Song, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalArticle

Abstract

In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10-5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.

Original languageEnglish
Article number349
JournalCoatings
Volume9
Issue number6
DOIs
Publication statusPublished - 2019 Jun 1

Fingerprint

Contact resistance
contact resistance
Nickel
radio frequencies
nickel
Silicon
Substrates
transmission lines
electric contacts
Electric lines
roughness
Surface roughness
electrical resistivity
silicon

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Eadi, Sunil Babu ; Song, Hyeong Sub ; Song, Hyun Dong ; Oh, Jungwoo ; Lee, Hi Deok. / Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi. In: Coatings. 2019 ; Vol. 9, No. 6.
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Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi. / Eadi, Sunil Babu; Song, Hyeong Sub; Song, Hyun Dong; Oh, Jungwoo; Lee, Hi Deok.

In: Coatings, Vol. 9, No. 6, 349, 01.06.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi

AU - Eadi, Sunil Babu

AU - Song, Hyeong Sub

AU - Song, Hyun Dong

AU - Oh, Jungwoo

AU - Lee, Hi Deok

PY - 2019/6/1

Y1 - 2019/6/1

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AB - In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10-5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.

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