In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10-5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.
Bibliographical noteFunding Information:
Funding: This research was funded by the MOTIE (Ministry of Trade, Industry & Energy (10048536) and the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices. This research was also supported by the Ministry of Trade, Industry and Energy (MOTIE) (10067808) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices
© 2019 by the authors.
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry