Abstract
Photo-thermal processing assisted by laser irradiation is proposed as a novel method to control the phase of nickel silicide with reduction in the diffusion of nickel into the silicon substrate. The third harmonics of Nd3+:Y3Al5O12 laser (wavelength, 355 nm) is used for photo-thermal processing. Optical and thermal simulations are performed to obtain an optimum thickness (30 nm) of the nickel film for photo-thermal processing and to predict the temperature profile of the nickel-silicon interface during laser irradiation. It is confirmed that Ni2Si, NiSi and NiSi2 phase are effectively formed at the laser energy densities of 15, 20–40, and 50 mJ/cm2, respectively. We demonstrate that the phases of nickel silicide determined by Raman spectroscopy and X-ray diffraction analyses are in good agreement with those predicted by the heat transfer simulation. In addition, undesirable diffusion of nickel into silicon substrate is considerably reduced by instantaneous photo-thermal processing using the nano-second laser (pulse duration, 6 ns).
Original language | English |
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Pages (from-to) | 263-268 |
Number of pages | 6 |
Journal | Materials Science in Semiconductor Processing |
Volume | 75 |
DOIs | |
Publication status | Published - 2018 Mar 1 |
Bibliographical note
Funding Information:This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the “ICT Consilience Creative Program” ( IITP-2017 −2017-0-01015 ) supervised by the IITP(Institute for Information & communications Technology Promotion).
Funding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the “ICT Consilience Creative Program” (IITP-2017 −2017-0-01015) supervised by the IITP(Institute for Information & communications Technology Promotion).
Publisher Copyright:
© 2017
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering