Abstract
Photo-thermal processing assisted by laser irradiation is proposed as a novel method to control the phase of nickel silicide with reduction in the diffusion of nickel into the silicon substrate. The third harmonics of Nd3+:Y3Al5O12 laser (wavelength, 355 nm) is used for photo-thermal processing. Optical and thermal simulations are performed to obtain an optimum thickness (30 nm) of the nickel film for photo-thermal processing and to predict the temperature profile of the nickel-silicon interface during laser irradiation. It is confirmed that Ni2Si, NiSi and NiSi2 phase are effectively formed at the laser energy densities of 15, 20–40, and 50 mJ/cm2, respectively. We demonstrate that the phases of nickel silicide determined by Raman spectroscopy and X-ray diffraction analyses are in good agreement with those predicted by the heat transfer simulation. In addition, undesirable diffusion of nickel into silicon substrate is considerably reduced by instantaneous photo-thermal processing using the nano-second laser (pulse duration, 6 ns).
| Original language | English |
|---|---|
| Pages (from-to) | 263-268 |
| Number of pages | 6 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 75 |
| DOIs | |
| Publication status | Published - 2018 Mar 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
}
Nickel mono-silicide formation using a photo-thermal process assisted by ultra-violet laser. / Jung, Sang Min; Kim, Jin Hwan; Park, Chul Jin; Shin, Moo Whan.
In: Materials Science in Semiconductor Processing, Vol. 75, 01.03.2018, p. 263-268.Research output: Contribution to journal › Article
TY - JOUR
T1 - Nickel mono-silicide formation using a photo-thermal process assisted by ultra-violet laser
AU - Jung, Sang Min
AU - Kim, Jin Hwan
AU - Park, Chul Jin
AU - Shin, Moo Whan
PY - 2018/3/1
Y1 - 2018/3/1
N2 - Photo-thermal processing assisted by laser irradiation is proposed as a novel method to control the phase of nickel silicide with reduction in the diffusion of nickel into the silicon substrate. The third harmonics of Nd3+:Y3Al5O12 laser (wavelength, 355 nm) is used for photo-thermal processing. Optical and thermal simulations are performed to obtain an optimum thickness (30 nm) of the nickel film for photo-thermal processing and to predict the temperature profile of the nickel-silicon interface during laser irradiation. It is confirmed that Ni2Si, NiSi and NiSi2 phase are effectively formed at the laser energy densities of 15, 20–40, and 50 mJ/cm2, respectively. We demonstrate that the phases of nickel silicide determined by Raman spectroscopy and X-ray diffraction analyses are in good agreement with those predicted by the heat transfer simulation. In addition, undesirable diffusion of nickel into silicon substrate is considerably reduced by instantaneous photo-thermal processing using the nano-second laser (pulse duration, 6 ns).
AB - Photo-thermal processing assisted by laser irradiation is proposed as a novel method to control the phase of nickel silicide with reduction in the diffusion of nickel into the silicon substrate. The third harmonics of Nd3+:Y3Al5O12 laser (wavelength, 355 nm) is used for photo-thermal processing. Optical and thermal simulations are performed to obtain an optimum thickness (30 nm) of the nickel film for photo-thermal processing and to predict the temperature profile of the nickel-silicon interface during laser irradiation. It is confirmed that Ni2Si, NiSi and NiSi2 phase are effectively formed at the laser energy densities of 15, 20–40, and 50 mJ/cm2, respectively. We demonstrate that the phases of nickel silicide determined by Raman spectroscopy and X-ray diffraction analyses are in good agreement with those predicted by the heat transfer simulation. In addition, undesirable diffusion of nickel into silicon substrate is considerably reduced by instantaneous photo-thermal processing using the nano-second laser (pulse duration, 6 ns).
UR - http://www.scopus.com/inward/record.url?scp=85037528234&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85037528234&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2017.11.046
DO - 10.1016/j.mssp.2017.11.046
M3 - Article
AN - SCOPUS:85037528234
VL - 75
SP - 263
EP - 268
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -