Nickel mono-silicide formation using a photo-thermal process assisted by ultra-violet laser

Sang Min Jung; Jin Hwan Kim; Chul Jin Park; Moo Whan Shin

doi:10.1016/j.mssp.2017.11.046

Nickel mono-silicide formation using a photo-thermal process assisted by ultra-violet laser

Sang Min Jung, Jin Hwan Kim, Chul Jin Park, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Photo-thermal processing assisted by laser irradiation is proposed as a novel method to control the phase of nickel silicide with reduction in the diffusion of nickel into the silicon substrate. The third harmonics of Nd³⁺:Y₃Al₅O₁₂ laser (wavelength, 355 nm) is used for photo-thermal processing. Optical and thermal simulations are performed to obtain an optimum thickness (30 nm) of the nickel film for photo-thermal processing and to predict the temperature profile of the nickel-silicon interface during laser irradiation. It is confirmed that Ni₂Si, NiSi and NiSi₂ phase are effectively formed at the laser energy densities of 15, 20–40, and 50 mJ/cm², respectively. We demonstrate that the phases of nickel silicide determined by Raman spectroscopy and X-ray diffraction analyses are in good agreement with those predicted by the heat transfer simulation. In addition, undesirable diffusion of nickel into silicon substrate is considerably reduced by instantaneous photo-thermal processing using the nano-second laser (pulse duration, 6 ns).

Original language	English
Pages (from-to)	263-268
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	75
DOIs	https://doi.org/10.1016/j.mssp.2017.11.046
Publication status	Published - 2018 Mar 1

Bibliographical note

Funding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the “ICT Consilience Creative Program” ( IITP-2017 −2017-0-01015 ) supervised by the IITP(Institute for Information & communications Technology Promotion).

Funding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the “ICT Consilience Creative Program” (IITP-2017 −2017-0-01015) supervised by the IITP(Institute for Information & communications Technology Promotion).

Publisher Copyright:
© 2017

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2017.11.046

Cite this

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title = "Nickel mono-silicide formation using a photo-thermal process assisted by ultra-violet laser",

abstract = "Photo-thermal processing assisted by laser irradiation is proposed as a novel method to control the phase of nickel silicide with reduction in the diffusion of nickel into the silicon substrate. The third harmonics of Nd3+:Y3Al5O12 laser (wavelength, 355 nm) is used for photo-thermal processing. Optical and thermal simulations are performed to obtain an optimum thickness (30 nm) of the nickel film for photo-thermal processing and to predict the temperature profile of the nickel-silicon interface during laser irradiation. It is confirmed that Ni2Si, NiSi and NiSi2 phase are effectively formed at the laser energy densities of 15, 20–40, and 50 mJ/cm2, respectively. We demonstrate that the phases of nickel silicide determined by Raman spectroscopy and X-ray diffraction analyses are in good agreement with those predicted by the heat transfer simulation. In addition, undesirable diffusion of nickel into silicon substrate is considerably reduced by instantaneous photo-thermal processing using the nano-second laser (pulse duration, 6 ns).",

author = "Jung, {Sang Min} and Kim, {Jin Hwan} and Park, {Chul Jin} and Shin, {Moo Whan}",

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N1 - Funding Information: This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the “ICT Consilience Creative Program” ( IITP-2017 −2017-0-01015 ) supervised by the IITP(Institute for Information & communications Technology Promotion). Funding Information: This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the “ICT Consilience Creative Program” (IITP-2017 −2017-0-01015) supervised by the IITP(Institute for Information & communications Technology Promotion). Publisher Copyright: © 2017

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N2 - Photo-thermal processing assisted by laser irradiation is proposed as a novel method to control the phase of nickel silicide with reduction in the diffusion of nickel into the silicon substrate. The third harmonics of Nd3+:Y3Al5O12 laser (wavelength, 355 nm) is used for photo-thermal processing. Optical and thermal simulations are performed to obtain an optimum thickness (30 nm) of the nickel film for photo-thermal processing and to predict the temperature profile of the nickel-silicon interface during laser irradiation. It is confirmed that Ni2Si, NiSi and NiSi2 phase are effectively formed at the laser energy densities of 15, 20–40, and 50 mJ/cm2, respectively. We demonstrate that the phases of nickel silicide determined by Raman spectroscopy and X-ray diffraction analyses are in good agreement with those predicted by the heat transfer simulation. In addition, undesirable diffusion of nickel into silicon substrate is considerably reduced by instantaneous photo-thermal processing using the nano-second laser (pulse duration, 6 ns).

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Nickel mono-silicide formation using a photo-thermal process assisted by ultra-violet laser

Abstract

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