Nickel oxide-induced crystallization of silicon for use in thin film transistors with a Si Nx diffusion filter

Jong Yeon Kim, Jin Woo Han, Jeong Min Han, Young Hwan Kim, Byeong Yun Oh, Byoung Yong Kim, Sang Keuk Lee, Dae Shik Seo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated the use of nickel oxide (NiO) as a catalyst for the metal-induced crystallization. Si Nx serves as a diffusion filter that forms an effective barrier to Ni and also acts as a passivation layer for metal contaminants. The NiO has a constant area density of 8.22× 106 Ni atoms cm-2. This allows enough depletion regions for the growth of disklike grains. The thin film transistor exhibited a field-effective mobility of 15.9 cm2 V-1 s-1, a threshold voltage of -5.2 V, an Ion Ioff ratio of 1.6× 107, and a gate voltage swing of 0.8 Vdecade.

Original languageEnglish
Article number143501
JournalApplied Physics Letters
Volume92
Issue number14
DOIs
Publication statusPublished - 2008 Apr 21

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nickel oxides
transistors
crystallization
filters
silicon
thin films
threshold voltage
metals
passivity
contaminants
depletion
catalysts
electric potential
atoms
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Jong Yeon ; Han, Jin Woo ; Han, Jeong Min ; Kim, Young Hwan ; Oh, Byeong Yun ; Kim, Byoung Yong ; Lee, Sang Keuk ; Seo, Dae Shik. / Nickel oxide-induced crystallization of silicon for use in thin film transistors with a Si Nx diffusion filter. In: Applied Physics Letters. 2008 ; Vol. 92, No. 14.
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Nickel oxide-induced crystallization of silicon for use in thin film transistors with a Si Nx diffusion filter. / Kim, Jong Yeon; Han, Jin Woo; Han, Jeong Min; Kim, Young Hwan; Oh, Byeong Yun; Kim, Byoung Yong; Lee, Sang Keuk; Seo, Dae Shik.

In: Applied Physics Letters, Vol. 92, No. 14, 143501, 21.04.2008.

Research output: Contribution to journalArticle

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AB - We investigated the use of nickel oxide (NiO) as a catalyst for the metal-induced crystallization. Si Nx serves as a diffusion filter that forms an effective barrier to Ni and also acts as a passivation layer for metal contaminants. The NiO has a constant area density of 8.22× 106 Ni atoms cm-2. This allows enough depletion regions for the growth of disklike grains. The thin film transistor exhibited a field-effective mobility of 15.9 cm2 V-1 s-1, a threshold voltage of -5.2 V, an Ion Ioff ratio of 1.6× 107, and a gate voltage swing of 0.8 Vdecade.

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