Abstract
We investigated the use of nickel oxide (NiO) as a catalyst for the metal-induced crystallization. Si Nx serves as a diffusion filter that forms an effective barrier to Ni and also acts as a passivation layer for metal contaminants. The NiO has a constant area density of 8.22× 106 Ni atoms cm-2. This allows enough depletion regions for the growth of disklike grains. The thin film transistor exhibited a field-effective mobility of 15.9 cm2 V-1 s-1, a threshold voltage of -5.2 V, an Ion Ioff ratio of 1.6× 107, and a gate voltage swing of 0.8 Vdecade.
| Original language | English |
|---|---|
| Article number | 143501 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2008 Apr 21 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Nickel oxide-induced crystallization of silicon for use in thin film transistors with a Si Nx diffusion filter. / Kim, Jong Yeon; Han, Jin Woo; Han, Jeong Min; Kim, Young Hwan; Oh, Byeong Yun; Kim, Byoung Yong; Lee, Sang Keuk; Seo, Dae Shik.
In: Applied Physics Letters, Vol. 92, No. 14, 143501, 21.04.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Nickel oxide-induced crystallization of silicon for use in thin film transistors with a Si Nx diffusion filter
AU - Kim, Jong Yeon
AU - Han, Jin Woo
AU - Han, Jeong Min
AU - Kim, Young Hwan
AU - Oh, Byeong Yun
AU - Kim, Byoung Yong
AU - Lee, Sang Keuk
AU - Seo, Dae Shik
PY - 2008/4/21
Y1 - 2008/4/21
N2 - We investigated the use of nickel oxide (NiO) as a catalyst for the metal-induced crystallization. Si Nx serves as a diffusion filter that forms an effective barrier to Ni and also acts as a passivation layer for metal contaminants. The NiO has a constant area density of 8.22× 106 Ni atoms cm-2. This allows enough depletion regions for the growth of disklike grains. The thin film transistor exhibited a field-effective mobility of 15.9 cm2 V-1 s-1, a threshold voltage of -5.2 V, an Ion Ioff ratio of 1.6× 107, and a gate voltage swing of 0.8 Vdecade.
AB - We investigated the use of nickel oxide (NiO) as a catalyst for the metal-induced crystallization. Si Nx serves as a diffusion filter that forms an effective barrier to Ni and also acts as a passivation layer for metal contaminants. The NiO has a constant area density of 8.22× 106 Ni atoms cm-2. This allows enough depletion regions for the growth of disklike grains. The thin film transistor exhibited a field-effective mobility of 15.9 cm2 V-1 s-1, a threshold voltage of -5.2 V, an Ion Ioff ratio of 1.6× 107, and a gate voltage swing of 0.8 Vdecade.
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U2 - 10.1063/1.2908036
DO - 10.1063/1.2908036
M3 - Article
AN - SCOPUS:42149176666
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 143501
ER -