NiO x Schottky-gated ZnO nanowire metal-semiconductor field effect transistor

Fast logic inverter and photo-detector

Syed Raza Ali Raza, Seyyed Hossein Hosseini Shokouh, Young Tack Lee, Ryong Ha, Heon-Jin Choi, Seongil Im

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We demonstrate a high performance ZnO nanowire (NW) metal-semiconductor field effect transistor (MESFET) using semi-transparent NiO x as a Schottky gate (SG), which shows excellent carrier mobility, on/off ratio, and sub-threshold slope of 301 cm 2 V -1 s -1 , 10 6 , and 60 mV per decade, respectively. Based on the MESFET device cells, we fabricated one-dimensional (1D) logic NOT, NAND, and NOR gate circuits. The NOT gate inverter showed a high voltage gain of ∼16 under a supply voltage of 5 V and also displayed an excellent voltage inverting dynamics of at least a few kHz. In addition, attributed to the intrinsic sub-band gap defects at the transparent SG NiO x /ZnO interface, our MESFET displayed good responses to visible light with a photo-gain of 7 × 10 4 . The persistent photoconductivity issue which originates from oxide semiconductor interfaces in general was initially present but was resolved by increasing the gate-source voltage of MESFET toward reverse bias.

Original languageEnglish
Pages (from-to)4428-4435
Number of pages8
JournalJournal of Materials Chemistry C
Volume2
Issue number22
DOIs
Publication statusPublished - 2014 Jun 14

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MESFET devices
Nanowires
Detectors
Electric potential
Carrier mobility
Photoconductivity
Energy gap
Defects
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Ali Raza, Syed Raza ; Hosseini Shokouh, Seyyed Hossein ; Lee, Young Tack ; Ha, Ryong ; Choi, Heon-Jin ; Im, Seongil. / NiO x Schottky-gated ZnO nanowire metal-semiconductor field effect transistor : Fast logic inverter and photo-detector. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 22. pp. 4428-4435.
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NiO x Schottky-gated ZnO nanowire metal-semiconductor field effect transistor : Fast logic inverter and photo-detector. / Ali Raza, Syed Raza; Hosseini Shokouh, Seyyed Hossein; Lee, Young Tack; Ha, Ryong; Choi, Heon-Jin; Im, Seongil.

In: Journal of Materials Chemistry C, Vol. 2, No. 22, 14.06.2014, p. 4428-4435.

Research output: Contribution to journalArticle

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AU - Ali Raza, Syed Raza

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AU - Im, Seongil

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