Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment

M. H. Cho, K. B. Chung, C. N. Whang, D. H. Ko, J. H. Lee, N. I. Lee

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Abstract

The characteristics of nitrided Hf O2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an N H3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of nitrided Hf O2 films indicate that the quantity of N incorporated into the film drastically increases with increasing annealing temperature, especially at temperatures over 900 °C. The incorporated N is mostly bonded to Si that diffused from the Si substrate into the film, while some N is incorporated to Hf O2 at high annealing temperature. Some molecular N2 is generated in the film, which is easily diffused out after additional annealing. Moreover, the chemisorbed N in the film is not completely stable, compared to that at the interfacial region: i.e., the N in the film predominantly out diffuses from the film after additional annealing in a N2 ambient.

Original languageEnglish
Article number202902
JournalApplied Physics Letters
Volume88
Issue number20
DOIs
Publication statusPublished - 2006 May 15

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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