The silicide formation by annealing plasma-enhanced atomic layer deposition (PE-ALD) Co and physical vapor deposition (PVD) Co was comparatively studied. Very pure Co films were deposited by PE-ALD with Co Cp2 and N H3 plasma. However, various analyses have shown that amorphous Si Nx interlayer was formed between PE-ALD Co and Si due to the N H3 plasma exposure in contrast with PVD Co. Due to the nitride interlayer, Co Si2 was epitaxially grown from PE-ALD Co by rapid thermal annealing through nitride mediated epitaxy. This process scheme is expected to provide a simple route for contact formation in future nanoscale devices.
Bibliographical noteFunding Information:
The authors gratefully acknowledge the financial support of Korea Electronic Technology Institute, BK21 Program, and POSTECH (Core Research Program). Also, this work was partially supported by Korea Research Foundation Grant funded by Korean Government (MOEHRD, KRF-2005-003-D00144). The XRD θ - 2 θ and Ф scans were carried out at Pohang Light Source 5C2 beam line and Yoon Hee Jeong’s Laboratory at POSTECH, respectively.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)