Nitride mediated epitaxy of Co Si2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co

Han Bo Ram Lee, J. Y. Son, Hyungjun Kim

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The silicide formation by annealing plasma-enhanced atomic layer deposition (PE-ALD) Co and physical vapor deposition (PVD) Co was comparatively studied. Very pure Co films were deposited by PE-ALD with Co Cp2 and N H3 plasma. However, various analyses have shown that amorphous Si Nx interlayer was formed between PE-ALD Co and Si due to the N H3 plasma exposure in contrast with PVD Co. Due to the nitride interlayer, Co Si2 was epitaxially grown from PE-ALD Co by rapid thermal annealing through nitride mediated epitaxy. This process scheme is expected to provide a simple route for contact formation in future nanoscale devices.

Original languageEnglish
Article number213509
JournalApplied Physics Letters
Volume90
Issue number21
DOIs
Publication statusPublished - 2007 Jun 1

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atomic layer epitaxy
epitaxy
nitrides
interlayers
vapor deposition
annealing
routes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The silicide formation by annealing plasma-enhanced atomic layer deposition (PE-ALD) Co and physical vapor deposition (PVD) Co was comparatively studied. Very pure Co films were deposited by PE-ALD with Co Cp2 and N H3 plasma. However, various analyses have shown that amorphous Si Nx interlayer was formed between PE-ALD Co and Si due to the N H3 plasma exposure in contrast with PVD Co. Due to the nitride interlayer, Co Si2 was epitaxially grown from PE-ALD Co by rapid thermal annealing through nitride mediated epitaxy. This process scheme is expected to provide a simple route for contact formation in future nanoscale devices.",
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Nitride mediated epitaxy of Co Si2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co. / Lee, Han Bo Ram; Son, J. Y.; Kim, Hyungjun.

In: Applied Physics Letters, Vol. 90, No. 21, 213509, 01.06.2007.

Research output: Contribution to journalArticle

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AB - The silicide formation by annealing plasma-enhanced atomic layer deposition (PE-ALD) Co and physical vapor deposition (PVD) Co was comparatively studied. Very pure Co films were deposited by PE-ALD with Co Cp2 and N H3 plasma. However, various analyses have shown that amorphous Si Nx interlayer was formed between PE-ALD Co and Si due to the N H3 plasma exposure in contrast with PVD Co. Due to the nitride interlayer, Co Si2 was epitaxially grown from PE-ALD Co by rapid thermal annealing through nitride mediated epitaxy. This process scheme is expected to provide a simple route for contact formation in future nanoscale devices.

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