No bias pi cell using a dual alignment layer with an intermediate pretilt angle

Jong Bok Kim, Kyung Chan Kim, Han Jin Ahn, Byoung Har Hwang, Jong Tae Kim, Sung Jin Jo, Chang Su Kim, Hong Koo Baik, Chu Ji Choi, Min Kyoung Jo, Youn Sang Kim, Jin Seol Park, Daeseung Kang

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Abstract

The authors fabricated a no-bias pi cell using a dual alignment layer with an intermediate pretilt angle via a rubbing. In the dual alignment layer system, the competition between crest region favoring the vertical alignment and trough region favoring planar alignment made it possible to achieve various pretilt angles, and adjusted pretilt angle from 90° to 20° with rubbing. In addition, as the intermediate pretilt angle plays a role in eliminating the activation energy and thus allowing formation of the initial bend state in pi cell fabrication, this approach achieved a no-bias pi cell for a liquid crystal display with both low power consumption and fast response.

Original languageEnglish
Article number023507
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
Publication statusPublished - 2007 Aug 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Kim, J. B., Kim, K. C., Ahn, H. J., Hwang, B. H., Kim, J. T., Jo, S. J., Kim, C. S., Baik, H. K., Choi, C. J., Jo, M. K., Kim, Y. S., Park, J. S., & Kang, D. (2007). No bias pi cell using a dual alignment layer with an intermediate pretilt angle. Applied Physics Letters, 91(2), [023507]. https://doi.org/10.1063/1.2757121