No bias pi cell using a dual alignment layer with an intermediate pretilt angle

Jong Bok Kim, Kyung Chan Kim, Han Jin Ahn, Byoung Har Hwang, Jong Tae Kim, Sung Jin Jo, Chang Su Kim, Hong Koo Baik, Chu Ji Choi, Min Kyoung Jo, Youn Sang Kim, Jin Seol Park, Daeseung Kang

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

The authors fabricated a no-bias pi cell using a dual alignment layer with an intermediate pretilt angle via a rubbing. In the dual alignment layer system, the competition between crest region favoring the vertical alignment and trough region favoring planar alignment made it possible to achieve various pretilt angles, and adjusted pretilt angle from 90° to 20° with rubbing. In addition, as the intermediate pretilt angle plays a role in eliminating the activation energy and thus allowing formation of the initial bend state in pi cell fabrication, this approach achieved a no-bias pi cell for a liquid crystal display with both low power consumption and fast response.

Original languageEnglish
Article number023507
JournalApplied Physics Letters
Volume91
Issue number2
DOIs
Publication statusPublished - 2007 Aug 1

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alignment
cells
troughs
liquid crystals
activation energy
fabrication

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, J. B., Kim, K. C., Ahn, H. J., Hwang, B. H., Kim, J. T., Jo, S. J., ... Kang, D. (2007). No bias pi cell using a dual alignment layer with an intermediate pretilt angle. Applied Physics Letters, 91(2), [023507]. https://doi.org/10.1063/1.2757121
Kim, Jong Bok ; Kim, Kyung Chan ; Ahn, Han Jin ; Hwang, Byoung Har ; Kim, Jong Tae ; Jo, Sung Jin ; Kim, Chang Su ; Baik, Hong Koo ; Choi, Chu Ji ; Jo, Min Kyoung ; Kim, Youn Sang ; Park, Jin Seol ; Kang, Daeseung. / No bias pi cell using a dual alignment layer with an intermediate pretilt angle. In: Applied Physics Letters. 2007 ; Vol. 91, No. 2.
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Kim, JB, Kim, KC, Ahn, HJ, Hwang, BH, Kim, JT, Jo, SJ, Kim, CS, Baik, HK, Choi, CJ, Jo, MK, Kim, YS, Park, JS & Kang, D 2007, 'No bias pi cell using a dual alignment layer with an intermediate pretilt angle', Applied Physics Letters, vol. 91, no. 2, 023507. https://doi.org/10.1063/1.2757121

No bias pi cell using a dual alignment layer with an intermediate pretilt angle. / Kim, Jong Bok; Kim, Kyung Chan; Ahn, Han Jin; Hwang, Byoung Har; Kim, Jong Tae; Jo, Sung Jin; Kim, Chang Su; Baik, Hong Koo; Choi, Chu Ji; Jo, Min Kyoung; Kim, Youn Sang; Park, Jin Seol; Kang, Daeseung.

In: Applied Physics Letters, Vol. 91, No. 2, 023507, 01.08.2007.

Research output: Contribution to journalArticle

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AU - Jo, Sung Jin

AU - Kim, Chang Su

AU - Baik, Hong Koo

AU - Choi, Chu Ji

AU - Jo, Min Kyoung

AU - Kim, Youn Sang

AU - Park, Jin Seol

AU - Kang, Daeseung

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