Noise performance design of CMOS preamplifier for the active semiconductor neural probe

Kyunghwan Kim, Sung June Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A systematic design guideline is presented for the noise performance of preamplifier for semiconductor neural probe which contains on-chip electronic circuitry. The overall signal-to-noise ratio (SNR) is calculated considering the spectral characteristics of the measured extracellular action potential and the low-frequency noise spectrum of the CMOS device from typical fabrication processes. An analytical expression of the' output noise power is derived, and utilized to tailor the frequency response and device parameters which are controllable by the circuit designer. An analysis of the output SNR of a two-stage CMOS differential amplifier is given and the major factors which have significant effects on the SNR are determined. We showed that a little deviation of the input device sizes and transconductance ratio from the optimal values can significantly deteriorate the SNR. Quantitative information of the preamplifier circuit parameters for satisfactory noise performance is provided.

Original languageEnglish
Pages (from-to)1097-1105
Number of pages9
JournalIEEE Transactions on Biomedical Engineering
Volume47
Issue number8
DOIs
Publication statusPublished - 2000 Jan 1

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Signal to noise ratio
Semiconductor materials
Differential amplifiers
Networks (circuits)
Transconductance
Frequency response
Fabrication

All Science Journal Classification (ASJC) codes

  • Biomedical Engineering

Cite this

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Noise performance design of CMOS preamplifier for the active semiconductor neural probe. / Kim, Kyunghwan; Kim, Sung June.

In: IEEE Transactions on Biomedical Engineering, Vol. 47, No. 8, 01.01.2000, p. 1097-1105.

Research output: Contribution to journalArticle

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