Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode

Seyed Hossein Hosseini Shokouh, Syed Raza Ali Raza, Hee Sung Lee, Seongil Im

Research output: Contribution to journalArticle

3 Citations (Scopus)


On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

Original languageEnglish
Pages (from-to)16367-16372
Number of pages6
JournalPhysical Chemistry Chemical Physics
Issue number31
Publication statusPublished - 2014 Jul 16


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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