Solution-processed oxide thin films have many attractive features for various electronic applications as like a next generation display and flexible electronics. But a high temperature annealing is often required to obtain high quality oxide thin film and the applications of solution-processed thin films are limited. To overcome this limit, we adopted a strategy that utilizes chemical driving force in addition to thermal energy. We chose precursors that can react each other and condensate via non-hydrolytic ester elimination reaction. To prove our concept a zinc tin oxide thin film transistor was fabricated with thermal annealing at low-temperature down to 300 °C. Although the oxide film was processed with low-temperature annealing, fabricated thin film transistors were functional and mobility of those of devices exceeded 1.0 cm 2 V -1 s -1.
Bibliographical noteFunding Information:
Acknowledgments This work was supported by the National Research Foundation of Korea (NRF, 2011-0029856 and 2012-1013034) funded by the government of Korea (MEST). Further funding came from LG Display (2011-8-1058).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry