TY - JOUR
T1 - Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures
AU - Choi, Yong June
AU - Kang, Kyung Mun
AU - Lee, Hong Sub
AU - Park, Hyung Ho
N1 - Publisher Copyright:
© 2015 The Royal Society of Chemistry.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/7/7
Y1 - 2015/7/7
N2 - Chlorine doping in a ZnO matrix to a concentration of 0.65 ± 0.05 at% was accomplished via atomic layer deposition using a home-made chlorine source at a low deposition temperature of 140°C. Structural and morphological properties were investigated using X-ray diffraction, field emission scanning electron microscopy, and grazing incidence wide-angle X-ray diffraction. The introduction of chlorine into the ZnO matrix resulted in significant grain growth reorientation due to chlorine doping in the oxygen sites of ZnO. Cl- ions preferentially occupied the substitutional O- ion site and O vacancies, and the preferential growth in the {100} planes changed to growth in the {002} planes along the longitudinal direction of the hexagonal wurtzite structure as a function of the Cl doping levels. This important phenomenon was explained by a passivation effect, resulting from the chlorine doping mechanism; this was elucidated using transmission electron microscopy. The optical transmittances of the undoped ZnO and ZnO:Cl films were approximately the same (88%), but the optical band gap was increased by the introduction of a Cl dopant in ZnO due to the Burstein-Moss effect. The lowest resistivity of ZnO:Cl was 1.215 × 10-2 Ω cm, and the corresponding carrier concentration and mobility were 5.715 × 1019 cm-3 and 31.81 cm2 V-1 s-1, respectively. Finally, the calculated doping efficiency of chlorine in ZnO was 10.8%, which was higher than that of aluminum-doped ZnO, even though the deposition temperature was very low when applied to plastic substrates due to the non-laminated growth of ZnO:Cl films.
AB - Chlorine doping in a ZnO matrix to a concentration of 0.65 ± 0.05 at% was accomplished via atomic layer deposition using a home-made chlorine source at a low deposition temperature of 140°C. Structural and morphological properties were investigated using X-ray diffraction, field emission scanning electron microscopy, and grazing incidence wide-angle X-ray diffraction. The introduction of chlorine into the ZnO matrix resulted in significant grain growth reorientation due to chlorine doping in the oxygen sites of ZnO. Cl- ions preferentially occupied the substitutional O- ion site and O vacancies, and the preferential growth in the {100} planes changed to growth in the {002} planes along the longitudinal direction of the hexagonal wurtzite structure as a function of the Cl doping levels. This important phenomenon was explained by a passivation effect, resulting from the chlorine doping mechanism; this was elucidated using transmission electron microscopy. The optical transmittances of the undoped ZnO and ZnO:Cl films were approximately the same (88%), but the optical band gap was increased by the introduction of a Cl dopant in ZnO due to the Burstein-Moss effect. The lowest resistivity of ZnO:Cl was 1.215 × 10-2 Ω cm, and the corresponding carrier concentration and mobility were 5.715 × 1019 cm-3 and 31.81 cm2 V-1 s-1, respectively. Finally, the calculated doping efficiency of chlorine in ZnO was 10.8%, which was higher than that of aluminum-doped ZnO, even though the deposition temperature was very low when applied to plastic substrates due to the non-laminated growth of ZnO:Cl films.
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U2 - 10.1039/c5tc01763g
DO - 10.1039/c5tc01763g
M3 - Article
AN - SCOPUS:84938702397
VL - 3
SP - 8336
EP - 8343
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 32
ER -