Non-Lithographic Fabrication of All-2D α-MoTe2 Dual Gate Transistors

Kyunghee Choi, Young Tack Lee, Jin Sung Kim, Sung Wook Min, Youngsuk Cho, Atiye Pezeshki, Do Kyung Hwang, Seongil Im

Research output: Contribution to journalArticle

30 Citations (Scopus)


As one of the emerging new transition-metal dichalcogenides materials, molybdenum ditelluride (α-MoTe2) is attracting much attention due to its optical and electrical properties. This study fabricates all-2D MoTe2-based field effect transistors (FETs) on glass, using thin hexagonal boron nitride and thin graphene in consideration of good dielectric/channel interface and source/drain contacts, respectively. Distinguished from previous works, in this study, all 2D FETs with α-MoTe2 nanoflakes are dual-gated for driving higher current. Moreover, for the present 2D dual gate FET fabrications on glass, all thermal annealing and lithography processes are intentionally exempted for fully non-lithographic method using only van der Waal's forces. The dual-gate MoTe2 FET displays quite a high hole and electron mobility over ≈20 cm2 V-1 s-1 along with ON/OFF ratio of ≈105 in maximum as an ambipolar FET and also demonstrates high drain current of a few tens-to-hundred μA at a low operation voltage. It appears promising enough to drive organic light emitting diode pixels and NOR logic functions on glass.

Original languageEnglish
Pages (from-to)3146-3153
Number of pages8
JournalAdvanced Functional Materials
Issue number18
Publication statusPublished - 2016 May 10

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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    Choi, K., Lee, Y. T., Kim, J. S., Min, S. W., Cho, Y., Pezeshki, A., Hwang, D. K., & Im, S. (2016). Non-Lithographic Fabrication of All-2D α-MoTe2 Dual Gate Transistors. Advanced Functional Materials, 26(18), 3146-3153.