As one of the emerging new transition-metal dichalcogenides materials, molybdenum ditelluride (α-MoTe2) is attracting much attention due to its optical and electrical properties. This study fabricates all-2D MoTe2-based field effect transistors (FETs) on glass, using thin hexagonal boron nitride and thin graphene in consideration of good dielectric/channel interface and source/drain contacts, respectively. Distinguished from previous works, in this study, all 2D FETs with α-MoTe2 nanoflakes are dual-gated for driving higher current. Moreover, for the present 2D dual gate FET fabrications on glass, all thermal annealing and lithography processes are intentionally exempted for fully non-lithographic method using only van der Waal's forces. The dual-gate MoTe2 FET displays quite a high hole and electron mobility over ≈20 cm2 V-1 s-1 along with ON/OFF ratio of ≈105 in maximum as an ambipolar FET and also demonstrates high drain current of a few tens-to-hundred μA at a low operation voltage. It appears promising enough to drive organic light emitting diode pixels and NOR logic functions on glass.
Bibliographical noteFunding Information:
K.C. and Y.T.L. contributed equally to this work. This research was supported by NRF (NRL program: Grant No. 2014R1A2A1A01004815), Nano Materials Technology Development Program (Grant No. 2012M3A7B4034985), Creative Materials Discovery Program through NRF funded by the Ministry of Science, ICT and Future Planning (Grant No. 2015M3D1A1068061), the Yonsei University (Future-leading Research Initiative of 2014: Grant No. 2014-22-0168), KIST Institution Program (No. 2E26420 & 2V04010), and Brain Korea 21 plus Program.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics