Non-Lithographic Fabrication of All-2D α-MoTe 2 Dual Gate Transistors

Kyunghee Choi, Young Tack Lee, Jin Sung Kim, Sung Wook Min, Youngsuk Cho, Atiye Pezeshki, Do Kyung Hwang, Seongil Im

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

As one of the emerging new transition-metal dichalcogenides materials, molybdenum ditelluride (α-MoTe 2 ) is attracting much attention due to its optical and electrical properties. This study fabricates all-2D MoTe 2 -based field effect transistors (FETs) on glass, using thin hexagonal boron nitride and thin graphene in consideration of good dielectric/channel interface and source/drain contacts, respectively. Distinguished from previous works, in this study, all 2D FETs with α-MoTe 2 nanoflakes are dual-gated for driving higher current. Moreover, for the present 2D dual gate FET fabrications on glass, all thermal annealing and lithography processes are intentionally exempted for fully non-lithographic method using only van der Waal's forces. The dual-gate MoTe 2 FET displays quite a high hole and electron mobility over ≈20 cm 2 V -1 s -1 along with ON/OFF ratio of ≈10 5 in maximum as an ambipolar FET and also demonstrates high drain current of a few tens-to-hundred μA at a low operation voltage. It appears promising enough to drive organic light emitting diode pixels and NOR logic functions on glass.

Original languageEnglish
Pages (from-to)3146-3153
Number of pages8
JournalAdvanced Functional Materials
Volume26
Issue number18
DOIs
Publication statusPublished - 2016 May 10

Fingerprint

Field effect transistors
Transistors
transistors
field effect transistors
Fabrication
fabrication
Glass
high current
glass
Gates (transistor)
Van der Waals forces
Hole mobility
Molybdenum
Graphite
Boron nitride
Electron mobility
Drain current
Organic light emitting diodes (OLED)
Graphene
Lithography

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Choi, Kyunghee ; Lee, Young Tack ; Kim, Jin Sung ; Min, Sung Wook ; Cho, Youngsuk ; Pezeshki, Atiye ; Hwang, Do Kyung ; Im, Seongil. / Non-Lithographic Fabrication of All-2D α-MoTe 2 Dual Gate Transistors In: Advanced Functional Materials. 2016 ; Vol. 26, No. 18. pp. 3146-3153.
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Choi, K, Lee, YT, Kim, JS, Min, SW, Cho, Y, Pezeshki, A, Hwang, DK & Im, S 2016, ' Non-Lithographic Fabrication of All-2D α-MoTe 2 Dual Gate Transistors ', Advanced Functional Materials, vol. 26, no. 18, pp. 3146-3153. https://doi.org/10.1002/adfm.201505346

Non-Lithographic Fabrication of All-2D α-MoTe 2 Dual Gate Transistors . / Choi, Kyunghee; Lee, Young Tack; Kim, Jin Sung; Min, Sung Wook; Cho, Youngsuk; Pezeshki, Atiye; Hwang, Do Kyung; Im, Seongil.

In: Advanced Functional Materials, Vol. 26, No. 18, 10.05.2016, p. 3146-3153.

Research output: Contribution to journalArticle

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AU - Im, Seongil

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