Non-toxically enhanced sulfur reaction for formation of chalcogenide thin films using a thermal cracker

Dae Hyung Cho, Woo Jung Lee, Sang Woo Park, Jae Hyung Wi, Won Seok Han, Jeha Kim, Mann Ho Cho, Dongseop Kim, Yong Duck Chung

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Sulfur-based metal chalcogenide films have been widely used for high-performance optoelectronic devices due to their attractive optical and electrical properties. Although typical approaches to the chemical deposition of chalcogenide films have some advantages such as large-area coverage and high thickness controllability, these processes require highly toxic and expensive hydrogenated materials. Here, we demonstrate an enhanced sulfur reaction with an environmentally safe and cost-competitive method using a thermal sulfur cracker cell. The elevated cracking-zone temperature enhanced the reactivity of sulfur by cracking evaporated sulfur molecules into smaller molecules, and resulted in the formation of a high-quality ZnS phase maintaining a low substrate temperature. The fabricated ultra-thin ZnS film played an excellent role as a buffer layer of the Cu(In,Ga)Se2 thin-film solar cell, as the film showed high photovoltaic performances.

Original languageEnglish
Pages (from-to)14593-14599
Number of pages7
JournalJournal of Materials Chemistry A
Volume2
Issue number35
DOIs
Publication statusPublished - 2014 Sep 21

Fingerprint

Sulfur
Thin films
Molecules
Ultrathin films
Poisons
Buffer layers
Controllability
Optoelectronic devices
Electric properties
Optical properties
Metals
Hot Temperature
Temperature
Substrates
Costs

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Cho, D. H., Lee, W. J., Park, S. W., Wi, J. H., Han, W. S., Kim, J., ... Chung, Y. D. (2014). Non-toxically enhanced sulfur reaction for formation of chalcogenide thin films using a thermal cracker. Journal of Materials Chemistry A, 2(35), 14593-14599. https://doi.org/10.1039/c4ta02507e
Cho, Dae Hyung ; Lee, Woo Jung ; Park, Sang Woo ; Wi, Jae Hyung ; Han, Won Seok ; Kim, Jeha ; Cho, Mann Ho ; Kim, Dongseop ; Chung, Yong Duck. / Non-toxically enhanced sulfur reaction for formation of chalcogenide thin films using a thermal cracker. In: Journal of Materials Chemistry A. 2014 ; Vol. 2, No. 35. pp. 14593-14599.
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Non-toxically enhanced sulfur reaction for formation of chalcogenide thin films using a thermal cracker. / Cho, Dae Hyung; Lee, Woo Jung; Park, Sang Woo; Wi, Jae Hyung; Han, Won Seok; Kim, Jeha; Cho, Mann Ho; Kim, Dongseop; Chung, Yong Duck.

In: Journal of Materials Chemistry A, Vol. 2, No. 35, 21.09.2014, p. 14593-14599.

Research output: Contribution to journalArticle

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AU - Cho, Dae Hyung

AU - Lee, Woo Jung

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AU - Han, Won Seok

AU - Kim, Jeha

AU - Cho, Mann Ho

AU - Kim, Dongseop

AU - Chung, Yong Duck

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AB - Sulfur-based metal chalcogenide films have been widely used for high-performance optoelectronic devices due to their attractive optical and electrical properties. Although typical approaches to the chemical deposition of chalcogenide films have some advantages such as large-area coverage and high thickness controllability, these processes require highly toxic and expensive hydrogenated materials. Here, we demonstrate an enhanced sulfur reaction with an environmentally safe and cost-competitive method using a thermal sulfur cracker cell. The elevated cracking-zone temperature enhanced the reactivity of sulfur by cracking evaporated sulfur molecules into smaller molecules, and resulted in the formation of a high-quality ZnS phase maintaining a low substrate temperature. The fabricated ultra-thin ZnS film played an excellent role as a buffer layer of the Cu(In,Ga)Se2 thin-film solar cell, as the film showed high photovoltaic performances.

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