Non-toxically enhanced sulfur reaction for formation of chalcogenide thin films using a thermal cracker

Dae Hyung Cho, Woo Jung Lee, Sang Woo Park, Jae Hyung Wi, Won Seok Han, Jeha Kim, Mann Ho Cho, Dongseop Kim, Yong Duck Chung

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Abstract

Sulfur-based metal chalcogenide films have been widely used for high-performance optoelectronic devices due to their attractive optical and electrical properties. Although typical approaches to the chemical deposition of chalcogenide films have some advantages such as large-area coverage and high thickness controllability, these processes require highly toxic and expensive hydrogenated materials. Here, we demonstrate an enhanced sulfur reaction with an environmentally safe and cost-competitive method using a thermal sulfur cracker cell. The elevated cracking-zone temperature enhanced the reactivity of sulfur by cracking evaporated sulfur molecules into smaller molecules, and resulted in the formation of a high-quality ZnS phase maintaining a low substrate temperature. The fabricated ultra-thin ZnS film played an excellent role as a buffer layer of the Cu(In,Ga)Se2 thin-film solar cell, as the film showed high photovoltaic performances.

Original languageEnglish
Pages (from-to)14593-14599
Number of pages7
JournalJournal of Materials Chemistry A
Volume2
Issue number35
DOIs
Publication statusPublished - 2014 Sep 21

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Cho, D. H., Lee, W. J., Park, S. W., Wi, J. H., Han, W. S., Kim, J., Cho, M. H., Kim, D., & Chung, Y. D. (2014). Non-toxically enhanced sulfur reaction for formation of chalcogenide thin films using a thermal cracker. Journal of Materials Chemistry A, 2(35), 14593-14599. https://doi.org/10.1039/c4ta02507e