Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire

Sun Kak Hwang, Sung Yong Min, Insung Bae, Suk Man Cho, Kang Lib Kim, Tae Woo Lee, Cheolmin Park

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

One-dimensional nanowires (NWs) have been extensively examined for numerous potential nano-electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric-gate field effect transistors (Fe-FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill-control of the location of NWs on a substrate. NWs randomly deposited on a substrate from solution-dispersed droplet made it extremely difficult to fabricate arrays of NW Fe-FETs. Moreover, rigid inorganic NWs were rarely applicable for flexible non-volatile memories. Here, we present the NW Fe-FETs with position-addressable polymer semiconducting NWs. Polymer NWs precisely controlled in both location and number between source and drain electrode were achieved by direct electrohydrodynamic NW printing. The polymer NW Fe-FETs with a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) exhibited non-volatile ON/OFF current margin at zero gate voltage of approximately 10 2 with time-dependent data retention and read/write endurance of more than 104 seconds and 102 cycles, respectively. Furthermore, our device showed characteristic bistable current hysteresis curves when being deformed with various bending radii and multiple bending cycles over 1000 times. Polymer NW-based flexible Fe-FET memory is realized with a position-addressable polymer semiconducting NW and a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) gate insulator. The devices with a carefully controlled NW/PVDF-TrFE interface exhibit non-volatile ON/OFF current margins of approximately 102 with time-dependent data retention and read/write endurance of more than 104 s and 10 2 cycles, respectively.

Original languageEnglish
Pages (from-to)1976-1984
Number of pages9
JournalSmall
Volume10
Issue number10
DOIs
Publication statusPublished - 2014 May 28

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Nanowires
Semiconducting polymers
Ferroelectric materials
Polymers
Data storage equipment
Gates (transistor)
Equipment and Supplies
Durability
Printing
Electrohydrodynamics
Nanoelectronics
Substrates
Field effect transistors
Photodetectors

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

Cite this

Hwang, S. K., Min, S. Y., Bae, I., Cho, S. M., Kim, K. L., Lee, T. W., & Park, C. (2014). Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire. Small, 10(10), 1976-1984. https://doi.org/10.1002/smll.201303814
Hwang, Sun Kak ; Min, Sung Yong ; Bae, Insung ; Cho, Suk Man ; Kim, Kang Lib ; Lee, Tae Woo ; Park, Cheolmin. / Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire. In: Small. 2014 ; Vol. 10, No. 10. pp. 1976-1984.
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Hwang, SK, Min, SY, Bae, I, Cho, SM, Kim, KL, Lee, TW & Park, C 2014, 'Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire', Small, vol. 10, no. 10, pp. 1976-1984. https://doi.org/10.1002/smll.201303814

Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire. / Hwang, Sun Kak; Min, Sung Yong; Bae, Insung; Cho, Suk Man; Kim, Kang Lib; Lee, Tae Woo; Park, Cheolmin.

In: Small, Vol. 10, No. 10, 28.05.2014, p. 1976-1984.

Research output: Contribution to journalArticle

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T1 - Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire

AU - Hwang, Sun Kak

AU - Min, Sung Yong

AU - Bae, Insung

AU - Cho, Suk Man

AU - Kim, Kang Lib

AU - Lee, Tae Woo

AU - Park, Cheolmin

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AB - One-dimensional nanowires (NWs) have been extensively examined for numerous potential nano-electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric-gate field effect transistors (Fe-FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill-control of the location of NWs on a substrate. NWs randomly deposited on a substrate from solution-dispersed droplet made it extremely difficult to fabricate arrays of NW Fe-FETs. Moreover, rigid inorganic NWs were rarely applicable for flexible non-volatile memories. Here, we present the NW Fe-FETs with position-addressable polymer semiconducting NWs. Polymer NWs precisely controlled in both location and number between source and drain electrode were achieved by direct electrohydrodynamic NW printing. The polymer NW Fe-FETs with a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) exhibited non-volatile ON/OFF current margin at zero gate voltage of approximately 10 2 with time-dependent data retention and read/write endurance of more than 104 seconds and 102 cycles, respectively. Furthermore, our device showed characteristic bistable current hysteresis curves when being deformed with various bending radii and multiple bending cycles over 1000 times. Polymer NW-based flexible Fe-FET memory is realized with a position-addressable polymer semiconducting NW and a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) gate insulator. The devices with a carefully controlled NW/PVDF-TrFE interface exhibit non-volatile ON/OFF current margins of approximately 102 with time-dependent data retention and read/write endurance of more than 104 s and 10 2 cycles, respectively.

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