Non-volatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on a single-crystalline tri-isopropylsilylethynyl pentacene field-effect transistor

Seok Ju Kang, Insung Bae, Youn Jung Park, Tae Ho Park, Jinwoo Sung, Sung Cheol Yoon, Kyung Hwan Kim, Dong Hoon Choi, Cheolmin Park

Research output: Contribution to journalArticle

111 Citations (Scopus)

Abstract

A new type of nonvolatile ferroelectric poly(vinylidene fluoride-cotrifluoroethylene) (P(VDF-TrFE)) memory based on an organic thin-film transistor (OTFT) with a single crystal of tri-isopropylsilylethynyl pentacene (TIPS-PEN) as the active layer is developed. A bottom-gate OTFT is fabricated with a thin P(VDF-TrFE) film gate insulator on which a one-dimensional ribbon-type TIPS-PEN single crystal, grown via a solvent-exchange method, is positioned between the Au source and drain electrodes. Post-thermal treatment optimizes the interface between the flat, single-crystalline ab plane of TIPS-PEN and the polycrystalline P(VDF-TrFE) surface with characteristic needle-like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source-drain current modulation with an ON/ OFF ratio hysteresis greater than 103, which is superior to a ferroelectric P(VDF-TrFE) OTFT that has a vacuum-evaporated pentacene layer. Data retention longer than 5×104 s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS-PEN on the chemically micropatterned surface allows fabrication arrays of TIPS-PEN single crystals that can be potentially useful for integrated arrays of ferroelectric polymeric TFT memory.

Original languageEnglish
Pages (from-to)1609-1616
Number of pages8
JournalAdvanced Functional Materials
Volume19
Issue number10
DOIs
Publication statusPublished - 2009 May 22

Fingerprint

Thin film transistors
vinylidene
Field effect transistors
Ferroelectric materials
fluorides
field effect transistors
Single crystals
Crystalline materials
Data storage equipment
transistors
thin films
Electrodes
Drain current
single crystals
Passivation
Needles
Seed
Hysteresis
Heat treatment
Modulation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kang, Seok Ju ; Bae, Insung ; Park, Youn Jung ; Park, Tae Ho ; Sung, Jinwoo ; Yoon, Sung Cheol ; Kim, Kyung Hwan ; Choi, Dong Hoon ; Park, Cheolmin. / Non-volatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on a single-crystalline tri-isopropylsilylethynyl pentacene field-effect transistor. In: Advanced Functional Materials. 2009 ; Vol. 19, No. 10. pp. 1609-1616.
@article{9b9b08875fcd4a629ee51bfea93c670e,
title = "Non-volatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on a single-crystalline tri-isopropylsilylethynyl pentacene field-effect transistor",
abstract = "A new type of nonvolatile ferroelectric poly(vinylidene fluoride-cotrifluoroethylene) (P(VDF-TrFE)) memory based on an organic thin-film transistor (OTFT) with a single crystal of tri-isopropylsilylethynyl pentacene (TIPS-PEN) as the active layer is developed. A bottom-gate OTFT is fabricated with a thin P(VDF-TrFE) film gate insulator on which a one-dimensional ribbon-type TIPS-PEN single crystal, grown via a solvent-exchange method, is positioned between the Au source and drain electrodes. Post-thermal treatment optimizes the interface between the flat, single-crystalline ab plane of TIPS-PEN and the polycrystalline P(VDF-TrFE) surface with characteristic needle-like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source-drain current modulation with an ON/ OFF ratio hysteresis greater than 103, which is superior to a ferroelectric P(VDF-TrFE) OTFT that has a vacuum-evaporated pentacene layer. Data retention longer than 5×104 s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS-PEN on the chemically micropatterned surface allows fabrication arrays of TIPS-PEN single crystals that can be potentially useful for integrated arrays of ferroelectric polymeric TFT memory.",
author = "Kang, {Seok Ju} and Insung Bae and Park, {Youn Jung} and Park, {Tae Ho} and Jinwoo Sung and Yoon, {Sung Cheol} and Kim, {Kyung Hwan} and Choi, {Dong Hoon} and Cheolmin Park",
year = "2009",
month = "5",
day = "22",
doi = "10.1002/adfm.200801097",
language = "English",
volume = "19",
pages = "1609--1616",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "10",

}

Non-volatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on a single-crystalline tri-isopropylsilylethynyl pentacene field-effect transistor. / Kang, Seok Ju; Bae, Insung; Park, Youn Jung; Park, Tae Ho; Sung, Jinwoo; Yoon, Sung Cheol; Kim, Kyung Hwan; Choi, Dong Hoon; Park, Cheolmin.

In: Advanced Functional Materials, Vol. 19, No. 10, 22.05.2009, p. 1609-1616.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Non-volatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on a single-crystalline tri-isopropylsilylethynyl pentacene field-effect transistor

AU - Kang, Seok Ju

AU - Bae, Insung

AU - Park, Youn Jung

AU - Park, Tae Ho

AU - Sung, Jinwoo

AU - Yoon, Sung Cheol

AU - Kim, Kyung Hwan

AU - Choi, Dong Hoon

AU - Park, Cheolmin

PY - 2009/5/22

Y1 - 2009/5/22

N2 - A new type of nonvolatile ferroelectric poly(vinylidene fluoride-cotrifluoroethylene) (P(VDF-TrFE)) memory based on an organic thin-film transistor (OTFT) with a single crystal of tri-isopropylsilylethynyl pentacene (TIPS-PEN) as the active layer is developed. A bottom-gate OTFT is fabricated with a thin P(VDF-TrFE) film gate insulator on which a one-dimensional ribbon-type TIPS-PEN single crystal, grown via a solvent-exchange method, is positioned between the Au source and drain electrodes. Post-thermal treatment optimizes the interface between the flat, single-crystalline ab plane of TIPS-PEN and the polycrystalline P(VDF-TrFE) surface with characteristic needle-like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source-drain current modulation with an ON/ OFF ratio hysteresis greater than 103, which is superior to a ferroelectric P(VDF-TrFE) OTFT that has a vacuum-evaporated pentacene layer. Data retention longer than 5×104 s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS-PEN on the chemically micropatterned surface allows fabrication arrays of TIPS-PEN single crystals that can be potentially useful for integrated arrays of ferroelectric polymeric TFT memory.

AB - A new type of nonvolatile ferroelectric poly(vinylidene fluoride-cotrifluoroethylene) (P(VDF-TrFE)) memory based on an organic thin-film transistor (OTFT) with a single crystal of tri-isopropylsilylethynyl pentacene (TIPS-PEN) as the active layer is developed. A bottom-gate OTFT is fabricated with a thin P(VDF-TrFE) film gate insulator on which a one-dimensional ribbon-type TIPS-PEN single crystal, grown via a solvent-exchange method, is positioned between the Au source and drain electrodes. Post-thermal treatment optimizes the interface between the flat, single-crystalline ab plane of TIPS-PEN and the polycrystalline P(VDF-TrFE) surface with characteristic needle-like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source-drain current modulation with an ON/ OFF ratio hysteresis greater than 103, which is superior to a ferroelectric P(VDF-TrFE) OTFT that has a vacuum-evaporated pentacene layer. Data retention longer than 5×104 s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS-PEN on the chemically micropatterned surface allows fabrication arrays of TIPS-PEN single crystals that can be potentially useful for integrated arrays of ferroelectric polymeric TFT memory.

UR - http://www.scopus.com/inward/record.url?scp=66449090458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66449090458&partnerID=8YFLogxK

U2 - 10.1002/adfm.200801097

DO - 10.1002/adfm.200801097

M3 - Article

AN - SCOPUS:66449090458

VL - 19

SP - 1609

EP - 1616

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 10

ER -