Non-volatile organic memory with sub-millimetre bending radius

Richard Hahnkee Kim; Hae Jin Kim; Insung Bae; Sun Kak Hwang; Dhinesh Babu Velusamy; Suk Man Cho; Kazuto Takaishi; Tsuyoshi Muto; Daisuke Hashizume; Masanobu Uchiyama; Pascal André; Fabrice Mathevet; Benoit Heinrich; Tetsuya Aoyama; Dae Eun Kim; Hyungsuk Lee; Jean Charles Ribierre; Cheolmin Park

doi:10.1038/ncomms4583

Non-volatile organic memory with sub-millimetre bending radius

Richard Hahnkee Kim, Hae Jin Kim, Insung Bae, Sun Kak Hwang, Dhinesh Babu Velusamy, Suk Man Cho, Kazuto Takaishi, Tsuyoshi Muto, Daisuke Hashizume, Masanobu Uchiyama, Pascal André, Fabrice Mathevet, Benoit Heinrich, Tetsuya Aoyama, Dae Eun Kim, Hyungsuk Lee, Jean Charles Ribierre, Cheolmin Park

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190 Citations (Scopus)

Abstract

High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

Original language	English
Article number	3583
Journal	Nature communications
Volume	5
DOIs	https://doi.org/10.1038/ncomms4583
Publication status	Published - 2014 Apr 8

Bibliographical note

Funding Information:
This project was supported by DAPA, ADD and the Converging Research Center Program through the Ministry of Education, Science, and Technology (MEST) (no. 2011K000631). This research was also supported by the Second Stage of the Brain Korea 21 Project in 2006 and the National Research Foundation of Korea (NRF) grant funded by the Korea government(MSIP) (no. 2007-0056091), the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning (2010-0019313), National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (no. 2010-0018289) and Basic Science Research Program through the NRF funded by the MEST (NRF-2012R1A1A1042311). J.-C.R. acknowledges support by the Basic Science Researcher Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (no. 2012-0000543). T.A. would like to acknowledge funding from the Japanese Society for the Promotion of Science via a JSPS KAKENHI grant (no. 22350084). The synchrotron radiation experiments were performed at the RIKEN Materials Science Beamline (BL44B2) at SPring-8 with the approval of RIKEN (proposal no. 20090100). P.A. would like to thank the Canon Foundation in Europe for having supported his visiting scientist position at RIKEN and SUPA-St Andrews for his advanced research fellowship.

Publisher Copyright:
© 2014 Macmillan Publishers Limited. All rights reserved.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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Kim, R. H., Kim, H. J., Bae, I., Hwang, S. K., Velusamy, D. B., Cho, S. M., Takaishi, K., Muto, T., Hashizume, D., Uchiyama, M., André, P., Mathevet, F., Heinrich, B., Aoyama, T., Kim, D. E., Lee, H., Ribierre, J. C., & Park, C. (2014). Non-volatile organic memory with sub-millimetre bending radius. Nature communications, 5, [3583]. https://doi.org/10.1038/ncomms4583

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title = "Non-volatile organic memory with sub-millimetre bending radius",

abstract = "High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.",

author = "Kim, {Richard Hahnkee} and Kim, {Hae Jin} and Insung Bae and Hwang, {Sun Kak} and Velusamy, {Dhinesh Babu} and Cho, {Suk Man} and Kazuto Takaishi and Tsuyoshi Muto and Daisuke Hashizume and Masanobu Uchiyama and Pascal Andr{\'e} and Fabrice Mathevet and Benoit Heinrich and Tetsuya Aoyama and Kim, {Dae Eun} and Hyungsuk Lee and Ribierre, {Jean Charles} and Cheolmin Park",

note = "Funding Information: This project was supported by DAPA, ADD and the Converging Research Center Program through the Ministry of Education, Science, and Technology (MEST) (no. 2011K000631). This research was also supported by the Second Stage of the Brain Korea 21 Project in 2006 and the National Research Foundation of Korea (NRF) grant funded by the Korea government(MSIP) (no. 2007-0056091), the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning (2010-0019313), National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (no. 2010-0018289) and Basic Science Research Program through the NRF funded by the MEST (NRF-2012R1A1A1042311). J.-C.R. acknowledges support by the Basic Science Researcher Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (no. 2012-0000543). T.A. would like to acknowledge funding from the Japanese Society for the Promotion of Science via a JSPS KAKENHI grant (no. 22350084). The synchrotron radiation experiments were performed at the RIKEN Materials Science Beamline (BL44B2) at SPring-8 with the approval of RIKEN (proposal no. 20090100). P.A. would like to thank the Canon Foundation in Europe for having supported his visiting scientist position at RIKEN and SUPA-St Andrews for his advanced research fellowship. Publisher Copyright: {\textcopyright} 2014 Macmillan Publishers Limited. All rights reserved.",

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language = "English",

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T1 - Non-volatile organic memory with sub-millimetre bending radius

AU - Kim, Richard Hahnkee

AU - Kim, Hae Jin

AU - Bae, Insung

AU - Hwang, Sun Kak

AU - Velusamy, Dhinesh Babu

AU - Cho, Suk Man

AU - Takaishi, Kazuto

AU - Muto, Tsuyoshi

AU - Hashizume, Daisuke

AU - Uchiyama, Masanobu

AU - André, Pascal

AU - Mathevet, Fabrice

AU - Heinrich, Benoit

AU - Aoyama, Tetsuya

AU - Kim, Dae Eun

AU - Lee, Hyungsuk

AU - Ribierre, Jean Charles

AU - Park, Cheolmin

N1 - Funding Information: This project was supported by DAPA, ADD and the Converging Research Center Program through the Ministry of Education, Science, and Technology (MEST) (no. 2011K000631). This research was also supported by the Second Stage of the Brain Korea 21 Project in 2006 and the National Research Foundation of Korea (NRF) grant funded by the Korea government(MSIP) (no. 2007-0056091), the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning (2010-0019313), National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (no. 2010-0018289) and Basic Science Research Program through the NRF funded by the MEST (NRF-2012R1A1A1042311). J.-C.R. acknowledges support by the Basic Science Researcher Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (no. 2012-0000543). T.A. would like to acknowledge funding from the Japanese Society for the Promotion of Science via a JSPS KAKENHI grant (no. 22350084). The synchrotron radiation experiments were performed at the RIKEN Materials Science Beamline (BL44B2) at SPring-8 with the approval of RIKEN (proposal no. 20090100). P.A. would like to thank the Canon Foundation in Europe for having supported his visiting scientist position at RIKEN and SUPA-St Andrews for his advanced research fellowship. Publisher Copyright: © 2014 Macmillan Publishers Limited. All rights reserved.

PY - 2014/4/8

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N2 - High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

AB - High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

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Non-volatile organic memory with sub-millimetre bending radius

Abstract

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