Nondestructive photoacoustic measurement of doping densities in bulk GaAs

Jong Tae Lim, Joong-Gill Choi, Sam Kyu Noh, Koo Chul Je, Sang Youp Yim, Seung Han Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.

Original languageEnglish
Pages (from-to)7888-7891
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number12
DOIs
Publication statusPublished - 2007 Dec 6

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Photoacoustic effect
Doping (additives)
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{b98a5087783b4e1080f05f665a8c47b3,
title = "Nondestructive photoacoustic measurement of doping densities in bulk GaAs",
abstract = "The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.",
author = "Lim, {Jong Tae} and Joong-Gill Choi and Noh, {Sam Kyu} and Je, {Koo Chul} and Yim, {Sang Youp} and Park, {Seung Han}",
year = "2007",
month = "12",
day = "6",
doi = "10.1143/JJAP.46.7888",
language = "English",
volume = "46",
pages = "7888--7891",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "12",

}

Nondestructive photoacoustic measurement of doping densities in bulk GaAs. / Lim, Jong Tae; Choi, Joong-Gill; Noh, Sam Kyu; Je, Koo Chul; Yim, Sang Youp; Park, Seung Han.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 12, 06.12.2007, p. 7888-7891.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Nondestructive photoacoustic measurement of doping densities in bulk GaAs

AU - Lim, Jong Tae

AU - Choi, Joong-Gill

AU - Noh, Sam Kyu

AU - Je, Koo Chul

AU - Yim, Sang Youp

AU - Park, Seung Han

PY - 2007/12/6

Y1 - 2007/12/6

N2 - The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.

AB - The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.

UR - http://www.scopus.com/inward/record.url?scp=37548999349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37548999349&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.7888

DO - 10.1143/JJAP.46.7888

M3 - Article

VL - 46

SP - 7888

EP - 7891

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -