Nondestructive photoacoustic measurement of doping densities in bulk GaAs

Jong Tae Lim; Joong Gill Choi; Sam Kyu Noh; Koo Chul Je; Sang Youp Yim; Seung Han Park

doi:10.1143/JJAP.46.7888

Nondestructive photoacoustic measurement of doping densities in bulk GaAs

Jong Tae Lim, Joong Gill Choi, Sam Kyu Noh, Koo Chul Je, Sang Youp Yim, Seung Han Park

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.

Original language	English
Pages (from-to)	7888-7891
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.46.7888
Publication status	Published - 2007 Dec 6

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.",

author = "Lim, {Jong Tae} and Choi, {Joong Gill} and Noh, {Sam Kyu} and Je, {Koo Chul} and Yim, {Sang Youp} and Park, {Seung Han}",

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AU - Lim, Jong Tae

AU - Choi, Joong Gill

AU - Noh, Sam Kyu

AU - Je, Koo Chul

AU - Yim, Sang Youp

AU - Park, Seung Han

PY - 2007/12/6

Y1 - 2007/12/6

N2 - The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.

AB - The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.

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ER -

Nondestructive photoacoustic measurement of doping densities in bulk GaAs

Abstract

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