Nondestructive photoacoustic measurement of doping densities in bulk GaAs

Jong Tae Lim, Joong Gill Choi, Sam Kyu Noh, Koo Chul Je, Sang Youp Yim, Seung Han Park

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The frequency-dependent photoacoustic (PA) signals and phase spectra of GaAs samples with different doping densities are measured and analyzed. In particular, we find that the magnitude differences of the PA signal and phase between intrinsic GaAs and doped GaAs materials decrease linearly with the doping density in the frequency region of nonradiative bulk recombination. The results show that the PA spectroscopic technique can be used to measure doping density in bulk semiconductors with reasonable accuracy.

Original languageEnglish
Pages (from-to)7888-7891
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number12
Publication statusPublished - 2007 Dec 6

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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