Nonhydrolytic alkyl halide elimination reaction and its application in solution-processed zinc tin oxide thin film transistors

Young Bum Yoo, Jee Ho Park, Hong Koo Baik, Kie Moon Song

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at an annealing temperature of 350 °C. We used a precursor combination of alkoxide and metal chloride to utilize the alkyl halide elimination reaction. Compared with transistor using chloride-only precursors, the resulting ZTO transistor showed improved performance. Solution-processed ZTO-TFTs prepared at 350 °C using an alkoxide-chloride precursor combination showed a field-effect mobility of 4.17cm2V -1 s-1, whereas that prepared using a chloride-only solution showed a mobility of 0.98cm2V-1 s-1. Thermal analysis showed that the alkoxide-chloride precursor was decomposed well at a given annealing temperature and formed oxide with few residual impurities compared with chloride-only precursors.

Original languageEnglish
Article number040306
JournalJapanese Journal of Applied Physics
Volume53
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
zinc oxides
tin oxides
Oxide films
halides
elimination
transistors
chlorides
alkoxides
Transistors
thin films
Annealing
Thermoanalysis
Sol-gels
Impurities
Temperature
annealing
Oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at an annealing temperature of 350 °C. We used a precursor combination of alkoxide and metal chloride to utilize the alkyl halide elimination reaction. Compared with transistor using chloride-only precursors, the resulting ZTO transistor showed improved performance. Solution-processed ZTO-TFTs prepared at 350 °C using an alkoxide-chloride precursor combination showed a field-effect mobility of 4.17cm2V -1 s-1, whereas that prepared using a chloride-only solution showed a mobility of 0.98cm2V-1 s-1. Thermal analysis showed that the alkoxide-chloride precursor was decomposed well at a given annealing temperature and formed oxide with few residual impurities compared with chloride-only precursors.",
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Nonhydrolytic alkyl halide elimination reaction and its application in solution-processed zinc tin oxide thin film transistors. / Yoo, Young Bum; Park, Jee Ho; Baik, Hong Koo; Song, Kie Moon.

In: Japanese Journal of Applied Physics, Vol. 53, No. 4, 040306, 01.01.2014.

Research output: Contribution to journalArticle

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AB - In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at an annealing temperature of 350 °C. We used a precursor combination of alkoxide and metal chloride to utilize the alkyl halide elimination reaction. Compared with transistor using chloride-only precursors, the resulting ZTO transistor showed improved performance. Solution-processed ZTO-TFTs prepared at 350 °C using an alkoxide-chloride precursor combination showed a field-effect mobility of 4.17cm2V -1 s-1, whereas that prepared using a chloride-only solution showed a mobility of 0.98cm2V-1 s-1. Thermal analysis showed that the alkoxide-chloride precursor was decomposed well at a given annealing temperature and formed oxide with few residual impurities compared with chloride-only precursors.

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