Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon

Keorock Choi, Yunwon Song, Bugeun Ki, Jungwoo Oh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrated time-dependent mass transport mechanisms of Au-assisted chemical etching of Si substrates. Variations in the etch rate and surface topology were correlated with catalyst features and etching duration. Nonlinear etching characteristics were associated with the formation of pinholes and whiskers. Variable rates of mass transport as a function of whisker density accounted for the nonlinear etch rates of Si. Nanopinholes on Au catalysts facilitated the vertical mass transport of reactants and byproducts, which dramatically changed the etch rate, surface topology, and porosity of Si. The suggested transport models describe the transient mass transport and the corresponding chemical reactions.

Original languageEnglish
Pages (from-to)2100-2105
Number of pages6
JournalACS Omega
Volume2
Issue number5
DOIs
Publication statusPublished - 2017 May 31

Fingerprint

Silicon
Etching
Mass transfer
Topology
Catalysts
Byproducts
Chemical reactions
Porosity
Substrates

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Choi, Keorock ; Song, Yunwon ; Ki, Bugeun ; Oh, Jungwoo. / Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon. In: ACS Omega. 2017 ; Vol. 2, No. 5. pp. 2100-2105.
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Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon. / Choi, Keorock; Song, Yunwon; Ki, Bugeun; Oh, Jungwoo.

In: ACS Omega, Vol. 2, No. 5, 31.05.2017, p. 2100-2105.

Research output: Contribution to journalArticle

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