We demonstrated time-dependent mass transport mechanisms of Au-assisted chemical etching of Si substrates. Variations in the etch rate and surface topology were correlated with catalyst features and etching duration. Nonlinear etching characteristics were associated with the formation of pinholes and whiskers. Variable rates of mass transport as a function of whisker density accounted for the nonlinear etch rates of Si. Nanopinholes on Au catalysts facilitated the vertical mass transport of reactants and byproducts, which dramatically changed the etch rate, surface topology, and porosity of Si. The suggested transport models describe the transient mass transport and the corresponding chemical reactions.
Bibliographical noteFunding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the “ICT Consilience Creative Program” (IITP-R0346-16-1008) supervised by the IITP (Institute for Information and Communications Technology Promotion) and was also supported by the grants from the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1D1A1A09918647).
© 2017 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)