Nonvolatile memory characteristics of a multi-stacked MOS capacitor using Ta2O5 and TaAlO4 as the charge trap layer

Hyo June Kim, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review


A flash memory, which uses a floating-gate SiO2/Si 3N4/SiO2 (ONO) structure for the next generation, non-volatile memory applications, has serious problems to overcome in the context of scaling down the device size. In this study, Al2O 3Ta2O5Al2O3 (ATA) and Al2O3/TaAlO4/Al2O3 (A/TAO/A) multilayer films were fabricated to replace the conventional ONO structure. The structures and thicknesses of the multilayers were analyzed by HRTEM and ellipsometry. All films were found to be comprised of amorphous phases, and interfacial layers (AlSiO3) were observed in both films. The electrical properties of the A/TAO/A films were better than those of the ATA films. Program/erase cycle tests were performed, and initial memory windows were maintained after 104 program/erase cycles with both films.

Original languageEnglish
Pages (from-to)555-560
Number of pages6
JournalJournal of Ceramic Processing Research
Issue number5
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites


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