TY - JOUR
T1 - Nonvolatile memory characteristics of a multi-stacked MOS capacitor using Ta2O5 and TaAlO4 as the charge trap layer
AU - Kim, Hyo June
AU - Choi, Doo Jin
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - A flash memory, which uses a floating-gate SiO2/Si 3N4/SiO2 (ONO) structure for the next generation, non-volatile memory applications, has serious problems to overcome in the context of scaling down the device size. In this study, Al2O 3Ta2O5Al2O3 (ATA) and Al2O3/TaAlO4/Al2O3 (A/TAO/A) multilayer films were fabricated to replace the conventional ONO structure. The structures and thicknesses of the multilayers were analyzed by HRTEM and ellipsometry. All films were found to be comprised of amorphous phases, and interfacial layers (AlSiO3) were observed in both films. The electrical properties of the A/TAO/A films were better than those of the ATA films. Program/erase cycle tests were performed, and initial memory windows were maintained after 104 program/erase cycles with both films.
AB - A flash memory, which uses a floating-gate SiO2/Si 3N4/SiO2 (ONO) structure for the next generation, non-volatile memory applications, has serious problems to overcome in the context of scaling down the device size. In this study, Al2O 3Ta2O5Al2O3 (ATA) and Al2O3/TaAlO4/Al2O3 (A/TAO/A) multilayer films were fabricated to replace the conventional ONO structure. The structures and thicknesses of the multilayers were analyzed by HRTEM and ellipsometry. All films were found to be comprised of amorphous phases, and interfacial layers (AlSiO3) were observed in both films. The electrical properties of the A/TAO/A films were better than those of the ATA films. Program/erase cycle tests were performed, and initial memory windows were maintained after 104 program/erase cycles with both films.
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M3 - Article
AN - SCOPUS:83455201707
VL - 12
SP - 555
EP - 560
JO - Journal of Ceramic Processing Research
JF - Journal of Ceramic Processing Research
SN - 1229-9162
IS - 5
ER -