Nonvolatile memory characteristics of a multi-stacked MOS capacitor using Ta2O5 and TaAlO4 as the charge trap layer

Hyo June Kim, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review

Fingerprint

Dive into the research topics of 'Nonvolatile memory characteristics of a multi-stacked MOS capacitor using Ta2O5 and TaAlO4 as the charge trap layer'. Together they form a unique fingerprint.

Medicine and Dentistry

Material Science

Chemistry