Nonvolatile memory characteristics of solution-processed oxide thin-film transistors using Ag nanoparticles

Jung Hyeon Bae, Gun Hee Kim, Yu Ri Choi, Myung Koo Kang, Dong Lim Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We developed a nonvolatile memory device based on a solution-processed oxide thin-film transistor (TFT) with Ag nanoparticles (NPs) as the charge trapping layer. We fabricated the device using a soluble MgInZnO active channel on a SiO2 gate dielectric, Ag NPs as a charge trapping site at the gate insulator-channel interface, and Al for source and drain electrodes. The transfer characteristics of the device showed a high level of clockwise hysteresis that can be used to demonstrate its memory function, due to electron trapping in the Ag NPs charge trapping layer. A large memory window (ΔVth) was observed with a forward and backward gate voltage sweep, and this memory window was increased in size by increasing the gate voltage sweep. These results show the potential application of memory on displays and disposable electronics.

Original languageEnglish
Pages (from-to)5771-5774
Number of pages4
JournalThin Solid Films
Volume519
Issue number17
DOIs
Publication statusPublished - 2011 Jun 30

Fingerprint

Thin film transistors
Oxide films
transistors
Charge trapping
Nanoparticles
Data storage equipment
nanoparticles
trapping
oxides
thin films
Gate dielectrics
Electric potential
electric potential
Hysteresis
Electronic equipment
Display devices
hysteresis
insulators
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Bae, Jung Hyeon ; Kim, Gun Hee ; Choi, Yu Ri ; Kang, Myung Koo ; Kim, Dong Lim ; Kim, Hyun Jae. / Nonvolatile memory characteristics of solution-processed oxide thin-film transistors using Ag nanoparticles. In: Thin Solid Films. 2011 ; Vol. 519, No. 17. pp. 5771-5774.
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Nonvolatile memory characteristics of solution-processed oxide thin-film transistors using Ag nanoparticles. / Bae, Jung Hyeon; Kim, Gun Hee; Choi, Yu Ri; Kang, Myung Koo; Kim, Dong Lim; Kim, Hyun Jae.

In: Thin Solid Films, Vol. 519, No. 17, 30.06.2011, p. 5771-5774.

Research output: Contribution to journalArticle

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T1 - Nonvolatile memory characteristics of solution-processed oxide thin-film transistors using Ag nanoparticles

AU - Bae, Jung Hyeon

AU - Kim, Gun Hee

AU - Choi, Yu Ri

AU - Kang, Myung Koo

AU - Kim, Dong Lim

AU - Kim, Hyun Jae

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AB - We developed a nonvolatile memory device based on a solution-processed oxide thin-film transistor (TFT) with Ag nanoparticles (NPs) as the charge trapping layer. We fabricated the device using a soluble MgInZnO active channel on a SiO2 gate dielectric, Ag NPs as a charge trapping site at the gate insulator-channel interface, and Al for source and drain electrodes. The transfer characteristics of the device showed a high level of clockwise hysteresis that can be used to demonstrate its memory function, due to electron trapping in the Ag NPs charge trapping layer. A large memory window (ΔVth) was observed with a forward and backward gate voltage sweep, and this memory window was increased in size by increasing the gate voltage sweep. These results show the potential application of memory on displays and disposable electronics.

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